Model-based ion beam etching rate control method and device

Abstract

Embodiments of the invention provide an etching rate control method of ion beam etching and an ion beam etching method and apparatus. The rate control method comprises: obtaining a target etching rate; substituting the target etching rate into a rate determining model, to obtain a condition that needs to be met by a technological parameter, wherein the rate determining model is a model in which atechnological parameter is used as an independent variable and an etching rate is used as a dependent variable, and the rate determining model is a model obtained through training on a to-be-trained model by using a sample characteristic parameter and a sample etching rate; and adjusting a value of the technological parameter according to the condition that needs to be met by a technological parameter, to enable an actual etching rate obtained through etching according to the value of the technological parameter to be equal to the target etching rate. The technical solutions of the embodimentsof the invention can be used for controlling an etching rate in an ion beam etching process, so that etching rate controllability is improved, thereby improving controllability and flexibility in anion beam etching process.

Description

technical field [0001] The invention relates to the technical field of ion beam etching, in particular to an ion beam etching etching rate control method, an ion beam etching method and a device. Background technique [0002] Ion beam etching is an etching technology that uses ions of a certain energy to bombard the surface of the etched component to sputter the atoms on the surface of the etched material to achieve the purpose of etching. Ion beam etching is widely used in the field of microfabrication because of its advantages of high image transfer accuracy, high etching efficiency, and not limited by etching materials. In the process of ion beam etching, the etching depth is determined by the etching rate and etching time. [0003] Since there are many factors affecting the etching rate, the controllability of the etching rate is poor. Therefore, in the prior art, the qualitative influence of process parameters on the etching rate is usually analyzed. [0004] However,...

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Problems solved by technology

[0003] Since there are many factors affecting the etching rate, the controllability of the etching rate is poor. Therefore, in the prior art, the qualitative influence of process parameters on the etching rate is usually analyzed.

[0004] However, it is difficult to control the etch rate by analyzing the qualitative influence of process parameters on the etch rate, which makes the controllability and flexibility of ion beam etching less

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