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Oxide sintered body, sputtering target and method for producing oxide thin film

A technology of oxide and sintered body, applied in semiconductor/solid-state device manufacturing, sputtering coating, vacuum evaporation coating, etc., can solve the problems of sputtering cracking, sputtering target cracking, abnormal film quality, etc., and achieve stable sputtering shooting effect

Active Publication Date: 2022-05-13
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In this sputtering method, due to the occurrence of abnormal discharge, etc., the following problems may occur: abnormal quality of the formed thin film, cracking of the sputtering target during sputtering, etc.
If the distribution of density, etc. is not uniform within the plane, abnormal discharge may occur, cracks during sputtering, etc. may occur

Method used

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  • Oxide sintered body, sputtering target and method for producing oxide thin film
  • Oxide sintered body, sputtering target and method for producing oxide thin film
  • Oxide sintered body, sputtering target and method for producing oxide thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] In a high-speed mixer manufactured by EARTHTECHNICA CO., LTD. with an average particle size of 0.6 μm 2 o 3 Powder, Ga with an average particle size of 1.5 μm 2 o 3 The powder was dry-mixed with ZnO powder having an average particle diameter of 0.8 μm to prepare a mixed powder.

[0095] In addition, the average particle diameter of a raw material powder was measured using the particle size distribution measuring apparatus HRA by Nikkiso Co., Ltd.. In this measurement, water was used as a solvent, and the measurement substance was measured at a refractive index of 2.20. In addition, the same measurement conditions were set also about the average particle diameter of the raw material powder described below. It should be noted that the average particle diameter of the raw material powder is the volume cumulative particle diameter D at the point where the cumulative volume is 50% by volume obtained by the laser diffraction scattering particle size distribution measureme...

Embodiment 2～3

[0101] A sputtering target was obtained by the same method as in Example 1. In addition, in Examples 2 to 3, each raw material powder was blended so that the atomic ratio of the metal elements contained in all the raw material powders became the atomic ratio described in Table 1 at the time of preparation of the mixed powder.

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Abstract

The oxide sintered body according to one aspect of the embodiment is an oxide sintered body containing indium, gallium, and zinc at a ratio satisfying the following formulas (1) to (3), and is composed of a single-phase crystal phase, and the average value of the crystal phase is The particle size is 15.0 μm or less. 0.01≤In / (In+Ga+Zn)<0.20(1) 0.10≤Ga / (In+Ga+Zn)≤0.49(2)0.50≤Zn / (In+Ga+Zn)≤0.89(3).

Description

technical field [0001] Embodiments of the present application relate to methods of manufacturing an oxide sintered body, a sputtering target, and an oxide thin film. Background technique [0002] The sputtering method, which is a method of forming a thin film using a sputtering target, is extremely effective for forming a thin film with large area and high precision, and the sputtering method has been widely used for display devices such as liquid crystal display devices. In the technical field of semiconductor layers such as thin-film transistors (hereinafter also referred to as "TFT") in recent years, In-Ga-Zn composite oxides (hereinafter also referred to as "IGZO") are used instead of amorphous silicon. Oxide semiconductors have attracted attention, and a sputtering method has also been used to form an IGZO thin film (for example, refer to Patent Document 1). [0003] In this sputtering method, problems such as abnormality in the quality of the formed thin film and crac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C23C14/34H01L21/203
CPCC04B35/453C23C14/08C23C14/34H01L21/02631H01L21/02565H01L21/02554C04B2235/3286C04B2235/76C04B2235/77C04B2235/786C04B2235/96C01G15/00H01L21/20
Inventor 寺村享祐深川功儿
Owner MITSUI MINING & SMELTING CO LTD
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