A diamond growth tray and system

A diamond and tray technology, applied in the field of diamond growth trays and systems, can solve problems such as high local plasma density, and achieve the effects of low product stress, long growth time, and reduced quantity

Active Publication Date: 2021-10-01
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This substrate table design method can effectively suppress the growth of polycrystalline diamond seed crystals at the four sides / corners by avoiding edge discharge and corner discharge, resulting in excessive local plasma density, but the defect of this design is still that it needs multiple times Dealing with impurities grown on the surface of the seed tray

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A diamond growth tray and system
  • A diamond growth tray and system
  • A diamond growth tray and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Please focus on figure 1 , the present invention provides a diamond growth tray, comprising a base 11 and a platform 12 mounted on the base 11;

[0036] The platform 12 is in the shape of a regular polygonal prism or a truncated cone, and has a groove 13 on the upper surface, and the edge of the opening of the groove 13 is designed to be chamfered.

[0037] Specifically, during the diamond growth process, the seed crystal is placed inside the groove 13, and the height of the upper surface of the seed crystal is 1-2mm lower than the edge of the concave edge; the diameter of the groove 13 is based on the synthetic single crystal The effective growth area is determined, and the diameter is less than or equal to 155mm; before use, the bottom of the groove 13 is first placed with auxiliary heat dissipation materials, such as filaments, sheets, etc., and the filament sheets are high temperature resistant (that is, can withstand over 1400°C) material, such as molybdenum, nick...

Embodiment 2

[0047] Please focus on figure 2 , the present invention also provides a diamond growth system, including the tray 1, and also includes a water cooling table 2, a tray lifting device 3, a detection device 5, and a control center 4;

[0048] The tray 1 is fixed on the water cooling table 2;

[0049] The water cooling platform 2 is installed on the tray lifting device 3;

[0050] The pallet lifting device 3 is used to control the up and down movement of the pallet 1; specifically, the pallet lifting device 3 includes a pulse motor and a lifting rail, and the water cooling table 2 is installed on the lifting rail to ensure that each time The lifting height is controlled between 0.1-1mm;

[0051] The detection device 5 is used to detect the thickness of the diamond in real time during the diamond growth process, and transmit the thickness data to the control center 4; the detection device 5 is a proximity position sensor;

[0052] The control center 4 is used to control the ope...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to the field of diamond manufacturing, in particular to a diamond growth tray and system. A diamond growth tray, comprising a base and a platform mounted on the base; the platform is in the shape of a regular polygonal prism or a circular truncated shape, and has a groove on the upper surface, and the edge of the opening of the groove is inverted corner design. Compared with the existing technology, it has the following effects: through the newly designed seed crystal tray, the plasma distribution and electric field distribution on the surface of the seed crystal can be maintained in the best state, ensuring a stable growth environment for the diamond seed crystal, reducing the number of surface growth defects, Finally, a high-quality single crystal diamond sheet is synthesized; through the newly designed seed tray, the growth rate of impurities such as carbon black on the edge of the seed tray can be significantly reduced, ensuring a longer stable growth time for a single time, and thicker diamonds can be grown at one time products and improve production efficiency.

Description

technical field [0001] The invention relates to the field of diamond manufacturing, in particular to a diamond growth tray and system. Background technique [0002] High-quality diamond has a high band gap and a wide light transmission spectrum. At the same time, it has ultra-high hardness and thermal conductivity, excellent insulation, and excellent physical and chemical properties such as acid resistance, heat resistance, and radiation resistance. It can be used in precision machining. , Optical windows, gemstones, MEMS (Micro-Electro-Mechanical System, Micro-Electro-Mechanical System), chips and other fields. However, high-quality natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure method, hot wire chemical vapor deposition method. Among them, the MPCVD (Microwave plasma chemical vapor deposition, microwave plasma chemical vapor deposition method) synthetic diamond method can th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/04C30B25/12
CPCC30B25/12C30B29/04
Inventor 彭国令黄翀
Owner CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap