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Control method and device of three-dimensional memory and storage medium

A control method and technology for a control device, which are applied in the semiconductor field and can solve problems such as channel current drop

Active Publication Date: 2019-12-17
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, there are various challenges in 3D memory technology, for example, there is a rapid drop in channel current as the number of layers continues to increase

Method used

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  • Control method and device of three-dimensional memory and storage medium
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  • Control method and device of three-dimensional memory and storage medium

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Embodiment Construction

[0041] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the specific technical solutions of the invention will be further described in detail below in conjunction with the drawings in the embodiments of the present invention. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0042] The memory is divided into NOR type memory (English expression is NOR Flash) and NAND type memory (English expression is NAND Flash) according to the internal structure. Among them, each bit line in the NOR type memory (English expression is Bit Line (referred to as BL) Each storage unit tube under each bit line in the NAND memory is connected in series and can realize page (English expression as page) reading. Here, the series structure of the memory cell tubes reduces the occupied area of ​​the metal wires, and the utilization rate of the ch...

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Abstract

The embodiment of the invention provides a control method and device of a three-dimensional memory and a storage medium. The method comprises the following steps: determining to carry out reading operation on a selected first word line; wherein the selected first word line is at least one of a plurality of word lines of the three-dimensional memory; applying a first voltage to the first word line,wherein the first voltage is used for conducting a memory cell tube on the first word line, the first voltage is higher than the second voltage, the second voltage is a voltage applied to other wordlines when it is determined that reading operation is performed on other word lines except the first word line; and the second voltage is used for conducting the memory cell tubes on the other word lines. According to the embodiment of the invention, when the first word line is read, the read conduction voltage on the first word line selected in the three-dimensional memory is increased to increase the current flowing through the memory cell tube on the first word line, so that the channel current in the three-dimensional memory is increased.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a control method, device and storage medium of a three-dimensional memory. Background technique [0002] In recent years, the development of flash memory (expressed as Flash Memory in English) is particularly rapid. The main feature of flash memory (referred to as memory in the following description) is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Therefore, it has been widely used in many fields such as microcomputer and automatic control. Moreover, in order to adapt to the current increasing amount of data storage in various fields, the capacity of the memory is also increasing. [0003] In the related technology, two-dimensional (2D, 2 Dimensions) memory shrinks the storage unit tube (expressed in English as cell, where the storage unit tube...

Claims

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Application Information

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IPC IPC(8): G11C16/08G11C16/10G11C16/26
CPCG11C16/08G11C16/10G11C16/26
Inventor 宋雅丽
Owner YANGTZE MEMORY TECH CO LTD
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