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Seeding method and manufacturing method of Czochralski silicon single crystal

A technology of Czochralski silicon and single crystal, which is applied to the seeding of Czochralski silicon single crystal. The above-mentioned seeding method is used to manufacture Czochralski silicon single crystal, which can solve the problem of difficulty in ensuring stable production of single crystal silicon rods, lack of judgment standards, etc. problems, to achieve the effect of reducing the dependence on technical proficiency, eliminating the influence of temperature adjustment results, and ensuring quality

Active Publication Date: 2021-09-07
LONGI GREEN ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This leads to uncertainty in the temperature adjustment process, lack of judgment standards, and it is difficult to ensure the stable production of single crystal silicon rods

Method used

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  • Seeding method and manufacturing method of Czochralski silicon single crystal
  • Seeding method and manufacturing method of Czochralski silicon single crystal
  • Seeding method and manufacturing method of Czochralski silicon single crystal

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Embodiment 1

[0024] figure 1 A seeding process involved in the Czochralski silicon single crystal seeding method is shown. This seeding process can be divided into initial seeding 11 , continuous diameter reduction process 12 and post seeding 13 after continuous diameter reduction process. In the continuous shrinkage process 12, adopt the Czochralski monocrystalline silicon seeding method of the present invention, at least use the seeding speed deviation as a parameter for regulating the seeding temperature, and the seeding speed deviation is the temperature-regulating period of the seeding temperature The difference between the average seeding speed and the set seeding speed.

[0025] After the single crystal is introduced, the seeding diameter of the initial seeding 11 is usually 12-16 mm. In order to eliminate the dislocations in the extracted single crystal, a continuous diameter reduction process 12 needs to be carried out. The target diameter range of diameter reduction is 5-6mm. A...

Embodiment 2

[0042] figure 2Another seeding process involved in the Czochralski silicon single crystal seeding method is given. This seeding process can be divided into initial seeding 21 , first diameter reduction process 22 , etc. fine grain process 23 , second diameter reduction process 24 , and seeding 25 after the second diameter reduction process. In the etc. fine crystal process 23, using the Czochralski single crystal silicon seeding method of the present invention, at least the seeding speed deviation is used as a parameter for regulating and controlling the seeding temperature, and the seeding speed deviation is within the temperature regulation period of the seeding The difference between the average seeding speed and the set seeding speed.

[0043] After the single crystal is introduced, the seeding diameter of the seeding initial stage 21 is usually 12-16mm. In order to eliminate dislocations in the extracted single crystal, a first diameter reduction process 22 needs to be...

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Abstract

The invention discloses a crystal seeding method for Czochralski silicon single crystal. The seeding temperature is regulated by the seeding speed deviation, and the seeding speed deviation is the difference between the average seeding speed and the set seeding speed in the seeding temperature adjustment period. . If the seeding speed deviation is positive, the seeding temperature is fine-tuned positively; if the seeding speed deviation is negative, the seeding temperature is fine-tuned negatively. According to the difference in the diameter reduction process, the seeding temperature control methods include: the entire seeding process has only one continuous diameter reduction process, which is regulated throughout the process, and the seeding temperature fine-tuning amount is set according to the power adjustment coefficient; or the seeding process is a non-continuous process. The diameter reduction process includes the first diameter reduction process, the equal grain reduction process and the second diameter reduction process. After the second diameter reduction process, the target diameter of diameter reduction is achieved. During the equal grain reduction process, the seeding temperature is adjusted once. The amount of fine adjustment is set according to the power adjustment coefficient. The invention also discloses the production method of the Czochralski silicon single crystal adopting the above seeding method. The invention can accurately regulate the temperature of the seeded crystal, thereby improving the yield of single crystal.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon manufacture, and in particular relates to a seeding method for a Czochralski silicon single crystal, and a method for manufacturing a Czochralski silicon single crystal by using the seeding method. Background technique [0002] Photovoltaic power generation, as one of the main energy sources for green energy and sustainable development of human beings, has been increasingly valued and developed vigorously by countries all over the world. As one of the basic materials for photovoltaic power generation, monocrystalline silicon wafers have a wide market demand. A common single crystal silicon growth method is the Czochralski method, that is, in a single crystal furnace, the seed crystal is immersed in a melt contained in a crucible, and the seed crystal is pulled while rotating the seed crystal and the crucible, so that the The lower end of the crystal is sequentially seeded, shoulde...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/20C30B29/06
Inventor 王正远李侨周锐
Owner LONGI GREEN ENERGY TECH CO LTD
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