Electrostatic protection device based on Sudoku-shaped silicon controlled rectifier structure and forming method thereof

An electrostatic protection and silicon crystal technology, applied in the field of electrostatic discharge protection semiconductors, can solve the problems of the stability and uniformity of the discharge current to be improved, and achieve the effect of large ESD discharge current and high safety

Inactive Publication Date: 2019-10-01
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The stability and uniformity of the discharge current of the existing controllable electrostatic protection devices need to be improved

Method used

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  • Electrostatic protection device based on Sudoku-shaped silicon controlled rectifier structure and forming method thereof
  • Electrostatic protection device based on Sudoku-shaped silicon controlled rectifier structure and forming method thereof
  • Electrostatic protection device based on Sudoku-shaped silicon controlled rectifier structure and forming method thereof

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Experimental program
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Effect test

Embodiment Construction

[0039] As mentioned above, the stability and uniformity of the discharge current of existing electrostatic protection devices need to be improved.

[0040] figure 1 It is a schematic diagram of the layout design of an electrostatic protection device. The area shown in Figure 101 is a P-type doped area, and the area shown in Figure 102 is an N-type doped area. The strip-shaped P-type doped area is connected to the The strip-shaped N-type doped regions are distributed in a staggered manner.

[0041] figure 2 It is a partial cross-sectional schematic diagram of an electrostatic protection device, combined with reference figure 1 and figure 2 A group of strip-shaped P-type doped regions and strip-shaped N-type doped regions can be formed in the N well 11, and another group of strip-shaped P-type doped regions and strip-shaped N-type doped regions are adjacent to it. The impurity region may be formed in the P-type semiconductor substrate. The P-type doped region and the N-ty...

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Abstract

An embodiment of the invention discloses an electrostatic protection device based on a Sudoku-shaped silicon controlled rectifier structure and a forming method thereof. The electrostatic protection device comprises nine doping nines arranged in a matrix of 3 rows and 3 columns, wherein first doping units are disposed at a center of the matrix and diagonally arranged with the center of the matrix,second doping units are arranged adjacent to the first doping units in the row direction and the column direction of the matrix, the first doping units comprise first doping areas and annular seconddoping areas around the first doping areas, the second doping units comprise second doping areas and annular first doping areas around the second doping areas, and the doping types of the first dopingareas are different from that of the second doping areas. According to the technical scheme in the embodiment of the invention, the current discharge capability of the electrostatic discharge can beimproved, and the stability and uniformity of the electrostatic discharge current can be improved.

Description

technical field [0001] The invention relates to the field of electrostatic discharge protection semiconductors, in particular to an electrostatic protection device based on a Jiugongge thyristor structure. Background technique [0002] In the field of semiconductor technology, the electrostatic discharge (Electrostatic Discharge, ESD) phenomenon is a major threat to integrated circuits. With the continuous reduction of the size of the semiconductor manufacturing process, the thickness of the device becomes smaller, and the harm caused by the device with a smaller thickness in the ESD event is becoming more and more serious, so ESD protection design is required. [0003] An ESD protection circuit based on a silicon controlled rectifier (SCR) structure has the advantage of improving protection efficiency, and thus is more and more widely used. [0004] The stability and uniformity of the discharge current of the existing controllable electrostatic protection devices need to b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/06
CPCH01L27/0262H01L27/0296H01L29/0684
Inventor 陈光李宏伟冯军宏陈祺李程王晨坤张飞龙
Owner SEMICON MFG INT (SHANGHAI) CORP
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