Method for preparing silicon nitride in sedimentation-type and self-propagating mode

A silicon nitride, self-propagating technology, applied in nitrogen compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of low reactor preparation yield and purity, energy consumption, energy consumption, etc., and achieve energy saving, partial Uniform, adjustable speed effect

Active Publication Date: 2019-10-01
宁夏时星科技有限公司
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Problems solved by technology

[0005] The silicon nitride preparation reactors in the prior art are mainly closed reactors, some of which need to be carried out in a high-pressure state, which consumes energy and is unsafe; some require heating reactions, which also cause energy consumption; and the existing reactor preparation The output and purity are not high, and the improvement of the overall equipment is urgently needed to increase the output and reduce energy consumption

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  • Method for preparing silicon nitride in sedimentation-type and self-propagating mode
  • Method for preparing silicon nitride in sedimentation-type and self-propagating mode
  • Method for preparing silicon nitride in sedimentation-type and self-propagating mode

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[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.

[0029] Throughout this specification, reference to "one embodiment," "an embodiment," "an example," or "example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in the present invention. In at least one embodiment. Thus, appearances of the phrases "in one embodiment," "in an embodim...

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Abstract

The invention provides a method for preparing silicon nitride in a sedimentation-type and self-propagating mode. The method is characterized in that a silicon-containing solid material is introduced into a sedimentation-type reactor furnace body from a solid material inlet; nitrogen is introduced into the furnace body through a gas inlet; the silicon-containing solid material and nitrogen are subjected to a self-propagating reaction in the furnace body to generate the silicon nitride; the silicon nitride settles to the bottom of the furnace body and is then output through a discharge port. According to the method for preparing the silicon nitride in the sedimentation-type and self-propagating mode provided by the invention, a sedimentation-type mode is adopted for preparation, and continuous synthesis of the silicon nitride can be realized.

Description

technical field [0001] The invention relates to the field of nitride preparation, and further relates to a method for preparing a sinking self-propagating silicon nitride. Background technique [0002] Silicon nitrides (compounds containing silicon and nitrogen) are widely used in industry as ceramics. For example, silicon nitride, which has many excellent properties, such as wear resistance, self-lubrication, high temperature and oxidation resistance, etc., can be used to prepare high temperature resistant parts, heat transfer parts, wear resistant materials and so on. [0003] Self-propagating technology is a way to synthesize materials by exothermic chemical reaction itself. Since the reaction can be continued through the exothermic chemical reaction itself, and the reaction can continue without an external heat source, it is favored by the industry. [0004] The sinking reactor (sinking furnace) is a kind of reactor, which allows the powdery material to complete a parti...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/068C04B35/584C04B35/64C04B35/65
CPCC01B21/068C01B21/0682C04B35/591C04B35/64C04B35/65C04B2235/66
Inventor 杜文贵秦军
Owner 宁夏时星科技有限公司
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