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Memristor based on metalloporphyrin heterojunction, preparation method thereof and application

A metalloporphyrin and heterojunction technology, applied in the direction of electrical components, etc., to achieve the effect of multiple performance indicators, stable performance, and reduced complexity

Active Publication Date: 2019-09-27
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, most of this kind of work has focused on the use of memristors to replace the resistors in the circuit to achieve signal filtering and the simulation research of using memristors to build filter circuits. There are reports

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  • Memristor based on metalloporphyrin heterojunction, preparation method thereof and application
  • Memristor based on metalloporphyrin heterojunction, preparation method thereof and application
  • Memristor based on metalloporphyrin heterojunction, preparation method thereof and application

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Embodiment Construction

[0030] The present invention will be further explained below in conjunction with the accompanying drawings.

[0031] Specific examples of the disclosed porphyrin memristors and references to specific examples of methods of making the same are now described in detail. In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. The drawings and their descriptions provided herein are only for illustrating embodiments of the present invention. The shapes and dimensions in the respective drawings are for schematic illustration only, and do not strictly reflect actual shapes and dimensional ratios. In addition, the embodiments shown in the present invention should not be considered to be limited to the specific shapes of the regions shown in the figures. intended to limit the scope of the inve...

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Abstract

The invention discloses a memristor based on a metalloporphyrin heterojunction, a preparation method thereof and application. The memristor comprises a bottom electrode, a heterojunction layer, a metal oxide layer and a top electrode arranged in sequence from bottom to top, wherein the heterojunction layer comprises two metalloporphyrin layers for regulating the electrical properties of the memristor; and the metal oxide layer is used for providing ions and vacancies required for the operation of the memristor. The metalloporphyrin heterojunction memristor has a simple preparation process, is stable in properties, is suitable for a flexible device, can be processed in a large area, has changeable and adjustable property indexes and has the voltage-dependent filtering characteristics; and besides, the device yield, the repetition and the property stability are high.

Description

technical field [0001] The invention belongs to the fields of information storage and artificial intelligence, specifically relates to the synaptic function simulation of organic memristors and neuromorphic devices, and is expected to be applied to the fields of logic circuits, resistive storage, neuromorphic computing, artificial intelligence and the like. Background technique [0002] The origin of memristor can be traced back to 1962 when T.W. Hickmott studied the resistance switching phenomenon of metal-insulator-metal (MIM) sandwich structure under bias voltage, and then the academic community devoted great enthusiasm to this field. In 1971, Professor Cai Shaotang of the University of California, Berkeley, based on the symmetry theory, proposed that there was another basic element besides resistance, capacitance, and inductance. He named it memristor, which represented the relationship between magnetic flux and charge. relationship between. Until 2008 HP Labs used Pt / T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/881H10N70/883H10N70/011
Inventor 解令海鞠若麟仪明东马可陈叶黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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