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A Method of Using Frequency Noise to Analyze the Energy Level of Displacement Damage Defects

A technology of displacement damage and noise analysis, which is applied in the direction of instruments, measuring devices, measuring electronics, etc.

Active Publication Date: 2021-07-13
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] Aiming at the above research status and existing problems, the present invention proposes a method for analyzing the energy level of displacement damage defects using low-frequency noise without changing the layout of the device and the steps of the production process, including the following steps:

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  • A Method of Using Frequency Noise to Analyze the Energy Level of Displacement Damage Defects
  • A Method of Using Frequency Noise to Analyze the Energy Level of Displacement Damage Defects
  • A Method of Using Frequency Noise to Analyze the Energy Level of Displacement Damage Defects

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Embodiment Construction

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0042] Technical principle of the present invention:

[0043] For a HEMT device, the S cd vs. V g -V th There are three areas in the figure that deserve attention, such as figure 1 As shown, these three regions are relative to V th , it is more dependent on the gate voltage bias. The channel resistance of a HEMT device is determined by the relatively constant non-gate resistance R U and the variable resistance R of the gate part G It consists of two parts...

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Abstract

The invention discloses a method for analyzing the energy level of displacement damage defects by using frequency noise. When high-energy nuclear radiation interacts with semiconductor materials, some atoms will be transferred from their original positions to semiconductor crystal lattices. This radiation-induced formation of displacement damage in the crystal can lead to changes in device performance. The 1 / f noise in the device is closely related to the distribution of defects and the change in energy level. Using a suitable noise model, a large amount of information related to the reliability of the device, such as the concentration, spatial position and energy distribution of the electroactive traps, can be extracted to obtain Data related to displacement damage defect levels.

Description

technical field [0001] The invention relates to the technical field of space radiation effect and reinforcement, in particular to a method for analyzing the energy level of displacement damage defects by using frequency noise. Background technique [0002] In recent years, GaN-based HEMT devices have been proven to have superior performance such as high frequency and high power compared with HEMT devices based on other materials. Although the GaN / AlGaN HEMT device has a wide bandgap, high saturation electron mobility and the presence of 2DEG on the heterojunction interface, the reliability of the device in the space environment is still widely concerned. We can use 1 / f noise measurements to help understand defects that affect device reliability. [0003] The energy particles that cause permanent damage in the space environment mainly include protons, electrons, and heavy ions. When energetic particles interact with semiconductor devices, several different physical processe...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2626G01R31/2648
Inventor 郭红霞郝蕊静琚安安潘霄宇秦丽郭维新张凤祁钟向丽欧阳晓平董世剑李波
Owner XIANGTAN UNIV
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