Copper particle with surface subjected to antioxidant protection, low-temperature sintered copper paste and sintering process using low-temperature sintered copper paste
A technology of low-temperature sintering and copper particles, which can be used in metal processing equipment, electrical components, circuits, etc., and can solve problems such as low surface energy and insoluble problems that plague the semiconductor packaging industry
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Embodiment 1
[0043] 10 g of copper particles with an average particle diameter of 0.1 μm were selected, and the configuration of the film-forming solution was: 0.75 g of BTA; 0.03 g of DPPD; and 500 ml of water. After film formation, it was confirmed by TEM that a uniform OSP film was formed on the surface of the copper particles with a film thickness of about 5 nm, and it was confirmed by XPS that the DPPD content in the OSP film was about 3.5% by mass.
Embodiment 2
[0045] 12 g of copper particles with an average particle diameter of 1 μm were selected, and the configuration of the film-forming solution was: 1.25 g of IM; 0.12 g of DPPD; and 500 ml of water. After film formation, it was confirmed by TEM that a uniform OSP film was formed on the surface of the copper particles with a film thickness of about 60 nm, and it was confirmed by XPS that the DPPD content in the OSP film was about 7.6% by mass.
Embodiment 3
[0047] 10 g of copper particles with an average particle diameter of 8 μm were selected, and the configuration of the film-forming solution was: 1 g of BIM; 0.05 g of DPPD; and 500 ml of water. After film formation, it was confirmed by TEM that a uniform OSP film was formed on the surface of the copper particles with a film thickness of about 50 nm, and it was confirmed by XPS that the DPPD content in the OSP film was about 4.4% by mass.
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