Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A transferable acoustic wave device

A technology of acoustic wave devices and substrates, applied in the field of resonators, can solve problems such as the incompatibility of the manufacturing process of constituent elements, and achieve the effect of avoiding transfer failure

Active Publication Date: 2019-08-23
TIANJIN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In summary, the above-mentioned problems are mainly due to the incompatibility of the manufacturing process between the constituent elements, which leads to the need for each constituent element to be independently manufactured and then combined with each other through the transfer method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A transferable acoustic wave device
  • A transferable acoustic wave device
  • A transferable acoustic wave device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

[0043] First of all, those skilled in the art should understand that although "first", "second", etc. are clearly mentioned in the present invention, they are only for convenience of description. Secondly, those skilled in the art should also understand that the technical solution of the present invention is applicable to all acoustic wave devices, which at least include: thin film bulk acoustic resonators, PMUTs (Piezoelectric Micromachined Ultrasonic Transducers, piezoelectric micromachined ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a transferable acoustic wave device. The acoustic wave device comprises a substrate; a bottom electrode, wherein the bottom electrode is arranged above the substrate, the bottom electrode is provided with a first extension part, and the first extension part and the substrate are in contact with each other and are connected with each other; a piezoelectric layer which is partially arranged above the bottom electrode; and a top electrode, wherein the top electrode is partially arranged above the piezoelectric layer, the top electrode is provided with a second extension part, and the second extension part and the substrate are contacted and connected with each other. According to the invention, the first extension part of the bottom electrode and the second extension part of the top electrode are respectively in contact with the substrate and are connected with the substrate, so that the connection forces with different transfer requirements are met by changing thedesign mode of the acoustic wave device, and the condition of transfer failure caused by too small or too large connection forces is avoided.

Description

technical field [0001] The invention relates to the field of resonators, in particular to a transferable acoustic wave device. Background technique [0002] Thin film bulk acoustic resonator (or thin film piezoelectric bulk acoustic resonator) is characterized in that the main part of the resonator has a sandwich structure, such as figure 1 As shown, there are top electrode T, piezoelectric layer P and bottom electrode B in order from top to bottom, and the film formation of the above-mentioned three-layer structure is generally obtained by sputtering process from bottom to top respectively. In addition, the area where the top electrode T, the piezoelectric layer P and the bottom electrode B overlap in the thickness direction is usually defined as the effective area of ​​the resonator. At the same time, when an alternating voltage signal of a certain frequency is applied between the electrodes, due to the inverse piezoelectric effect of the piezoelectric material, sound wav...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/05H03H9/17
CPCH03H9/02015H03H9/02047H03H9/0514H03H9/172
Inventor 庞慰高传海江源张孟伦张浩张林
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com