Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-sensitivity hydrogen sensor at room temperature and preparation method thereof

A sensor and hydrogen technology, applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of inconvenient application, and achieve the effect of easy operation, convenient use and high sensitivity

Inactive Publication Date: 2019-08-23
TONGJI UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, gas sensors usually require complex spectrometers or color charts for comparison, which are not convenient for application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-sensitivity hydrogen sensor at room temperature and preparation method thereof
  • High-sensitivity hydrogen sensor at room temperature and preparation method thereof
  • High-sensitivity hydrogen sensor at room temperature and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A high-sensitivity hydrogen sensor at room temperature comprises a substrate and a hydrogen sensitive layer in sequence, and the hydrogen sensitive layer is a palladium-doped tungsten trioxide thin film. Further, in this embodiment, the preferred substrate is a graphene / Si heterostructure Schottky junction composed of n-type silicon wafer and graphene. The thickness of the hydrogen sensitive layer is generally 20-200 nm. In this embodiment, the thickness of the hydrogen sensitive layer is selected to be 100 nm. In the hydrogen sensitive layer, the molar ratio Pd:W=1:50. The resistivity of the n-type silicon wafer is 1-10Ω·cm, and the graphene is single-layer graphene.

[0043] The preparation method of the above-mentioned highly sensitive hydrogen sensor at room temperature comprises the following steps:

[0044] S1: Fabrication of graphene / Si heterostructure Schottky junction:

[0045] S1-1: Etching the silicon dioxide on the surface of the n-type silicon wafer to ob...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a high-sensitivity hydrogen sensor at a room temperature and a preparation method thereof. The hydrogen sensor comprises a substrate and a hydrogen sensitive layer in sequence, and the hydrogen sensitive layer is a palladium-doped tungsten trioxide film. The preparation method comprises the following steps: (1) a graphene / Si heterostructure Schottky junction is prepared; (2) a tungsten trioxide sol is prepared; and (3) spin coating of the obtained tungsten trioxide sol on the graphene / Si heterostructure Schottky junction is carried out to obtain a gasochromic WO3 / graphene / Si series sensor, that is, the high-sensitivity hydrogen sensor at the room temperature. In comparison with the prior art, visual detection can be carried out, the reaction response time is short,the sensitivity is high, the use is convenient, the operation is easy, and the purpose of accurately and timely detecting hydrogen leakage is thus achieved.

Description

technical field [0001] The invention relates to the technical field of photoelectric conversion, in particular to a preparation method of a high-sensitivity hydrogen sensor at room temperature. Background technique [0002] Due to its non-toxic, clean and renewable characteristics, hydrogen has been widely used in various industries in recent years. Simultaneously because hydrogen has a very wide explosion limit (4~74vol%) in the air and low ignition point, flame propagation speed is fast, therefore, needs to have a sensitive detection method to leaked hydrogen. However, since hydrogen is a colorless and odorless gas, the development of a highly sensitive hydrogen sensor for detecting hydrogen concentration and hydrogen leakage in the environment has become an issue of increasing concern. One of the key points in the field of sensor research. So far, various materials such as carbon nanotubes (CNTs), metal oxides, nitrides, polymers, and metals have been extensively invest...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/78G01N21/77G01N21/27
CPCG01N21/27G01N21/77G01N21/783G01N2021/7753G01N2021/7783
Inventor 高国华祁万钰张增星吴广明王浩然朱琼沈军岑定成于成龙
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com