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External cavity tunable laser and wavelength tuning method

A technology for tuning lasers and wavelengths, applied in the field of lasers, can solve problems such as slow tuning speed, achieve the effects of reducing impact, avoiding frequent use, and realizing tuning

Inactive Publication Date: 2019-08-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the use of a mechanical structure for tuning, it is affected by vibration and the tuning speed is slow

Method used

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  • External cavity tunable laser and wavelength tuning method
  • External cavity tunable laser and wavelength tuning method
  • External cavity tunable laser and wavelength tuning method

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Embodiment Construction

[0049] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0050] According to one aspect of the present invention, a kind of external cavity tunable laser based on Littman structure is provided, such as figure 1 and figure 2 shown, including:

[0051] The semiconductor gain chip 1, the first collimating lens 2, the blazed grating 3 and the mirror 4 opposite to the blazed grating 3 are placed in sequence; the semiconductor gain chip 1, the first collimating lens 2 and the blazed grating 3 are located on the same optical axis , and there is an angle greater than 0 between the grating plane of the blazed grating 3 and the optical axis; wherein, the semiconductor gain chip 1 includes the sampling grating area 10, the phase modulation area 11, the gain area 12 and the The sampling...

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PUM

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Abstract

The invention provides an external cavity tunable laser and a wavelength tuning method, and belongs to the technical field of lasers. The external cavity tunable laser comprises a semiconductor gain chip, a first collimating lens, a blazed grating and a reflector opposite to the blazed grating, wherein the semiconductor gain chip, the first collimating lens and the blazed grating are located on the same optical axis, and an included angle larger than 0 exists between the grating plane of the blazed grating and the optical axis. The semiconductor gain chip sequentially comprises a sampling grating region, a phase modulation region, a gain region, and a first electrode, a second electrode and a third electrode which respectively cover the sampling grating region, the phase modulation regionand the gain region from left to right. The blazed grating and the reflector are fixed on an electric or manual control mechanical structure. According to the invention, the large-range, rapid and fine tuning of the wavelength by the laser is realized, and the output wavelength can be narrowed.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to an external cavity tunable laser and a wavelength tuning method. Background technique [0002] Tunable narrow linewidth lasers are widely used in coherent optical communication, laser radar, precision interferometry, dense wavelength division multiplexing, gas concentration detection and other fields. Especially with the increase of communication capacity, coherent optical communication needs to provide greater bandwidth and transmission speed, which requires higher and higher line width and tuning speed of lasers. Therefore, there is an increasing demand for semiconductor lasers with high tuning speed, large wavelength tuning range, and narrow linewidth. [0003] At present, tunable lasers can be divided into two categories: monolithic integrated type and external cavity type. Monolithic integration mainly includes distributed Bragg reflection (DBR), sampling grating DBR, super...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14H01S5/024H01S5/042
CPCH01S5/02415H01S5/0425H01S5/141H01S5/146
Inventor 班德超陈伟张晨玮祝宁华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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