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Image sensor and method of forming the same

An image sensor and pixel area technology, applied in semiconductor devices, electric solid state devices, radiation control devices, etc., can solve problems such as optical crosstalk and poor imaging quality of image sensors, and achieve increased area, prevention of optical crosstalk, and good imaging quality. Effect

Active Publication Date: 2021-11-30
淮安西德工业设计有限公司
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  • Application Information

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Problems solved by technology

[0004] However, if the incident angle of the incident light above the photosensitive area is too large, photons will directly enter the adjacent pixel area, resulting in optical crosstalk, resulting in poor imaging quality of the image sensor

Method used

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  • Image sensor and method of forming the same
  • Image sensor and method of forming the same
  • Image sensor and method of forming the same

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Embodiment Construction

[0032] As mentioned in the background, the imaging quality of the image sensor is relatively poor, which will now be described in detail with reference to specific embodiments.

[0033] figure 1 It is a structural schematic diagram of an embodiment of an image sensor.

[0034] Please refer to figure 1 , a substrate 100, the substrate 100 includes several mutually separated pixel regions A, and an isolation region between adjacent pixel regions A; a photoelectric doped region 110 and a floating diffusion region 120 located in the pixel region A of the substrate 100; The isolation structure 130 located on the surface of the isolation area of ​​the substrate 100 and the pixel area A; the filter layer 140 located on the surface of the isolation structure 130 in the pixel area A; the reflective structure 150 located between adjacent filter layers 140; located on the surface of the filter layer 150 The microlens 160.

[0035] In the above image sensor, the reflective structure 15...

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Abstract

An image sensor and its forming method, the image sensor includes: a first substrate, the first substrate includes opposite first surfaces and second surfaces, the first substrate includes several mutually separated pixel regions, and adjacent an isolation area between the pixel areas; a first reflective structure located on the second surface of the first substrate; a second reflective structure located in the isolation area, and the second reflective structure penetrates from the first surface to the second surface; a second substrate located on the surface of the first reflective structure, the second substrate includes opposite third surfaces and fourth surfaces, the third surface is in contact with the surface of the first reflective structure, There are several floating diffusion regions separated from each other in the second substrate; a conductive plug located in the second substrate, the conductive plug penetrates from the pixel region into the second substrate, and the The conductive plug is electrically connected with the floating diffusion area and the pixel area. The imaging quality of the image sensor is relatively good.

Description

technical field [0001] The invention relates to the technical fields of semiconductor manufacturing and photoelectric imaging, in particular to an image sensor and a forming method thereof. Background technique [0002] Image sensors are classified into complementary metal oxide image sensors (CMOS Image Sensor, CIS) and charge coupled device (Charge Coupled Device, CCD) image sensors, which are usually used to convert optical signals into corresponding electrical signals. The CCD image sensor has the advantages of high image sensitivity and low noise, but it is difficult to integrate the CCD image sensor with other devices, and the CCD image sensor consumes a lot of power. In contrast, CIS has the advantages of simple process, easy integration with other devices, small size, light weight, low power consumption, and low cost. At present, CIS has been widely used in still digital cameras, camera phones, digital video cameras, medical imaging devices (such as gastroscopes), a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14601H01L27/14603H01L27/14629H01L27/1463H01L27/14643H01L27/14685H01L27/14689
Inventor 吴明吴孝哲林宗贤吴龙江熊建锋朱晓彤
Owner 淮安西德工业设计有限公司
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