Field-effect transistor fabrication method and field-effect transistor

Abstract

The invention provides a field-effect transistor fabrication method and a field-effect transistor, and belongs to the technical field of field-effect transistor manufacturing. The field-effect transistor fabrication method comprises the steps of fabricating a gate electrode on a substrate; fabricating a gate dielectric layer on surfaces of the substrate and the gate electrode; transferring a two-dimensional semiconductor channel layer to the gate dielectric layer; and fabricating a source electrode and a drain electrode which are in a concentric shape on a surface of the two-dimensional semiconductor channel layer, wherein an outer circle is the drain electrode, and an inner circle is the source electrode. By different shapes of the source electrode and the drain electrode in the concentric shape, a high-field region is more easily generated between the source electrode and the drain electrode, so that saturation characteristic of the transistor under a relatively low source-drain voltage is achieved, and the operation voltage and the power consumption during the working process of the transistor are reduced.

Description

technical field [0001] The invention relates to the technical field of field effect transistor manufacturing, in particular to a method for preparing a field effect transistor and the field effect transistor. Background technique [0002] In the post-Moore era, traditional silicon-based three-dimensional field effect transistors are on the path of size reduction. Due to physical limitations such as short channel effects and increasingly high R&D and manufacturing costs, people have begun to pay attention to the application of two-dimensional semiconductors in this field. MoS 2 , MoSe 2 And other two-dimensional materials, because there are no dangling bonds, and there is no short channel effect in the case of a single layer or few layers, the cost is low and other reasons have become the focus of research. However, there are still some key problems in this field that have not been resolved, such as: the source-drain voltage required for the transistor to reach saturation i...

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Problems solved by technology

However, there are still some key problems in this field that have not been resolved, such as: the source-drain voltage required for the transistor to reach saturation is too large, and the output resistance of the transistor is too small even when it reaches saturation, which leads to low-dimensional semiconductors in The application of analog circuits is still at a standstill

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