Novel back contact heterojunction battery and manufacturing method thereof

Abstract

The invention discloses a novel back contact heterojunction battery and a manufacturing method thereof. The novel back contact heterojunction battery comprises a silicon substrate piece, wherein a semiconductor passivation layer, a first semiconductor layer and an antireflection layer are sequentially arranged on the light receiving surface of the silicon substrate piece, and the semiconductor passivation layer is arranged on the backlight surface; the first semiconductor layer and the laminated layer of a second semiconductor and a first semiconductor are arranged on the semiconductor passivation layer in a staggered mode; a transparent conductive thin film layer is arranged on the first semiconductor layer and the laminated layer separately; an electrode is arranged on the transparent conductive thin film layer; an insulating isolation layer is arranged between the first semiconductor layer and the laminated layer; and inter-band tunneling contact is formed between the second semiconductor layer and the first semiconductor layer. The manufacturing method is simple in operation steps, the first semiconductor layer directly covers the second semiconductor layer, and secondary masketching is not needed, so that the performance damage and complexity of alignment caused by multiple times of masking and etching in the manufacturing process is reduced, and the method is suitable for large-scale production requirements in the future.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a novel back contact heterojunction cell and a manufacturing method thereof. Background technique [0002] Improving the conversion efficiency of industrial production of solar cells is the future trend of the development of solar energy industry and gradually replacing traditional energy sources. The improvement of cell conversion efficiency mainly improves the electrical parameters such as open circuit voltage, fill factor and short circuit current density; in heterojunction solar cells, by inserting a layer of intrinsic non- The crystalline silicon layer greatly improves the surface passivation effect of the base silicon, and can obtain higher minority carrier lifetime and open circuit voltage, thereby improving the conversion efficiency. In the back contact cell, the electrodes are all distributed on the back, that is, the P pole and the N pole are arranged crosswise on the back o...

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Problems solved by technology

[0003] However, there are many difficulties in the manufacturing process of back-contact heterojunction solar cells: 1) The process flow is complex and lengthy, requiring multiple wet chemical etching and cleaning, and the amorphous silicon film layer is easily damaged by immersion in acid or alkali solution. and lose the original activity and quality; 2) Form cross-arranged N-type regions and P-type regions on the back, and the two regions need to be completely isolated and insulated to avoid contact short circuits that seriously affect the performance of the battery. Therefore, either in the process of coating Use a mask to prevent the two polarities of the film from overlapping each other, resulting in carrier recombination; mask operation and strict alignment requirements, so the production capacity per unit time is low and the production cost is high, and it is not suitable for large-scale mass production

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