Mid-infrared light detector and preparation method thereof
A detector, infrared light technology, applied in the field of photoelectric detection, to achieve high photoresponsivity, improve the effect of weak light absorption
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[0029] Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of applying the technical solutions of the present invention, and all technical solutions formed by adopting equivalent replacements or equivalent transformations fall within the protection scope of the present invention.
[0030] The invention discloses a mid-infrared photodetector and a preparation method thereof, a mid-infrared photodetector, as shown in the attached figure 1 As shown, it includes a single crystal silicon substrate 1, an insulating layer 2, a continuous graphene layer 4, a quantum dot layer 5 and a nano-grating contact electrode covering the quantum dot; the single crystal silicon substrate 1, insulating layer 2, The continuous graphene layer 4, the quantum dot layer 5 and the nano-grating contact electrodes covering the quantum dots are all arranged...
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