Proton injection grid VCSEL and preparation method thereof

A proton and grid technology, applied in the field of preparation of proton implanted grid VCSEL, can solve problems such as device reliability degradation, achieve the effects of reducing series resistance, avoiding damage, and stabilizing single transverse mode lasing

Inactive Publication Date: 2019-07-02
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally, the single transverse mode VCSEL is mainly an oxidation-limited VCSEL, but the oxidation of the VCSEL reduces the reliability of the device.

Method used

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  • Proton injection grid VCSEL and preparation method thereof
  • Proton injection grid VCSEL and preparation method thereof
  • Proton injection grid VCSEL and preparation method thereof

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Embodiment 1

[0026] Refer below figure 1 A proton implanted grid VCSEL structure provided according to an embodiment of the present invention is described. It includes: a conductive GaAs substrate 11, an n-type GaAs buffer layer 12, an n-type AlGaAs / AlAs DBR 13, an AlGaAs lower confinement layer 14, a multi-quantum well light-emitting region 15, an AlGaAs upper confinement layer 16, and an epitaxial p-type AlGaAs / AlAs DBR 17 , proton injection grid structure 31 , secondary epitaxial p-type AlGaAs / AlAs DBR 41 , p-type GaAs ohmic contact layer 42 , n-face electrode 52 and p-face electrode 51 .

[0027] The present invention also provides a preparation method of proton implanted grid VCSEL, comprising the following steps:

[0028] Step 1: Put a conductive GaAs substrate into the MOVCD, raise the temperature in the chamber to 700-750°C, and inject H 2 and AsH 3 , to remove water and oxides from the substrate surface. Lower the temperature to 600-650°C, and pass TMGa, AsH into the chamber ...

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Abstract

The invention discloses a proton injection grid VCSEL and a preparation method thereof, and belongs to the technical field of semiconductors. The VCSEL comprises a conductive GaAs substrate, n-type GaAs buffer layer, a DBR of n-type AlGaAs / AlAs, an AlGaAs lower limiting layer, a multi-quantum well light emitting region, an AlGaAs upper limiting layer, a DBR of a primary epitaxy p-type AlGaAs / AlAs,a proton injection grid structure, a DBR of a secondary epitaxy p-type AlGaAs / AlAs, a p-type GaAs ohmic contact layer, an n-surface electrode and a p-surface electrode. The proton injection grid structure has the thickness of 3-5 pairs of DBRs, can provide the effective current and gain limitation, and also can control the proton injection depth well. The width of the proton injection grid gradually decreases from the center to the two sides, and the overall optical gain distribution is matched with the single transverse mode Gaussian distribution, thereby achieving the stable single transverse mode lasing.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method of a proton implanted grid VCSEL. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is widely used in 3D sensing, laser printing, optical communication and optical storage due to its advantages of low power consumption, easy two-dimensional integration, easy coupling of circular light spot with optical fiber, and cost saving in on-chip testing. field. VCSEL generally includes a columnar resonator structure, including a buffer layer, a lower DBR, a lower confinement layer, a quantum well light-emitting layer, an upper confinement layer, an upper DBR and an ohmic contact layer. In order to reduce the threshold current, oxidation or proton implantation is used to form a current confinement structure. Electrodes are made on the contact layer and the substrate surface, and current is injected from the electrodes into...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/323H01S5/343
CPCH01S5/183H01S5/187H01S5/32316H01S5/34353
Inventor 王智勇周广正李颖兰天
Owner BEIJING UNIV OF TECH
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