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A parallel current sharing structure of silicon carbide mosfet

A silicon carbide, parallel technology, used in output power conversion devices, climate sustainability, electrical components, etc., can solve problems such as inconsistent driving signals and false turn-on

Active Publication Date: 2021-03-19
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention solves the problem of wrong turn-on caused by the inconsistency of the drive signal in the parallel structure of the traditional parallel silicon carbide MOSFET, and meets and satisfies the high-power design requirements of the silicon carbide MOSFET

Method used

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  • A parallel current sharing structure of silicon carbide mosfet
  • A parallel current sharing structure of silicon carbide mosfet
  • A parallel current sharing structure of silicon carbide mosfet

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0024] The silicon carbide parallel current sharing structure described in this example is composed of n stages, such as figure 1 shown, each stage consists of a SiC MOSFETQ 1 , Q 2 ,...,Q n and its driving circuit; in each driving circuit, each driving power supply is connected in series with a current sharing inductor, the current sharing inductor is connected to the driving resistor, and the driving resistor is connected to a single MOSFET, that is, the driving power u g1 , u g2 ,...,u gn The positive terminal of the current sharing inductor L is connected g1 , L g2 ,...,L gn One end a1, a2,..., an, current sharing inductor L g1 , L g2 ,...,L gn The other end b1, b2, ..., bn are respectively connected to the drive resistor R g1 , R g2 ,...,R gn One end of the drive resistor R g1 , R g2 ,...,R gn The other end of the single si...

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Abstract

The invention discloses a parallel current sharing structure of silicon carbide MOSFETs, which is composed of n stages. N is a positive integer no smaller than 1. Each stage is composed of silicon carbide MOSFETs Q1, Q2, ..., Qn and a driving circuit; in the driving circuit, each driving power supply is serially connected with a current sharing inductor, the current sharing inductor is connected with a driving resistor, the driving resistor is connected with a single MOSFET, that is, positive electrodes of the driving power supplies ug1, ug2, ..., ugn are connected with one ends a1, a2, ..., an of the current sharing inductors Lg1, Lg2, ..., Lgn, the other ends b1, b2, ..., bn of the current sharing inductors Lg1, Lg2, ..., Lgn are connected with one ends of driving resistors Rg1, Rg2, ..., Rgn, and the other ends of the driving resistors are connected with the silicon carbide MOSFETs Q1, Q2, ..., Qn.

Description

technical field [0001] The present invention relates to a silicon carbide switching device topology. Background technique [0002] Currently widely used switching devices are mainly silicon-based MOSFETs and IGBTs. The switching loss of silicon-based MOSFET is low, but the conduction loss is very high if the withstand voltage is 1700V and above. Above 10kHz. The MOSFET switching device using a silicon carbide substrate has the advantage of low conduction loss compared with the silicon substrate MOSFET, and has the advantages of low wake and low switching loss compared with the IGBT. [0003] Monolithic silicon carbide MOSFETs often have low power. When they need to be used in higher power applications, they need to be used in parallel to increase the passing current capability. However, when silicon carbide MOSFETs are used in parallel, the on-off current of the device will be unequal due to the error in time and amplitude of the drive, and the difference in parasitic par...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/088H01F27/30
CPCY02B70/10
Inventor 庞云亭郭心铭韦统振霍群海
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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