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mems pressure sensor and preparation method

A pressure sensor and sensitive membrane technology, applied in the field of sensors, can solve the problems of large volume and small range of pressure sensors, and achieve the effect of good performance consistency and increased structural flexibility

Active Publication Date: 2021-12-17
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a MEMS pressure sensor to solve the technical problems of large volume and small range in the pressure sensor in the prior art

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Embodiment Construction

[0055] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0056] Please also refer to Figure 1 to Figure 15 , the MEMS pressure sensor provided by the present invention will now be described. Described MEMS pressure sensor comprises pressure sensor sensitive film layer 16, structural support layer 9 and circuit board 19, pressure sensor sensitive film layer 16 lower surface is provided with piezoresistor 15 and metal lead connected into Wheatstone bridge, upper surface A corrugated structure 18 is provided, and the thickness of the pressure sensor sensitive film layer 16 is 2 μm-100 μm; the upper surface of the structur...

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Abstract

The invention provides a MEMS pressure sensor and a preparation method thereof, comprising a pressure sensor sensitive film layer, a structural support layer and a circuit board, the lower surface of the pressure sensor sensitive film layer is bonded to the upper surface of the structural support layer, and the upper surface of the circuit board is connected to the structure The lower surface of the support layer is welded and connected; the lower surface of the pressure sensor sensitive film layer is provided with a piezoresistor and metal leads, and the upper surface is provided with a corrugated structure. The thickness of the pressure sensor sensitive film layer is 2μm-100μm; Groove, the lower surface is provided with annular isolation groove 7 and four Pad points, is provided with the silicon column of array distribution in silicon groove, and the height of silicon column is lower than the depth of silicon groove, and Pad point realizes and structural support layer through four through holes electrical connections on the upper surface. The MEMS pressure sensor provided by the invention can be used in harsh environments such as corrosion, fluid, radiation, conduction, dynamic testing, etc., and can also reduce the volume of the sensor, improve the overload resistance of the sensor, and realize low-stress leadless packaging.

Description

technical field [0001] The invention belongs to the technical field of sensors, and more specifically relates to a MEMS pressure sensor and a preparation method thereof. Background technique [0002] MEMS sensors, or Microelectro Mechanical Systems, is a multidisciplinary cutting-edge research field developed on the basis of microelectronics technology. With the wide application of MEMS pressure sensors in aerospace, military, industrial and other fields, the development of small-volume pressure sensors that can be used in harsh environments such as high impact, high overload, conductivity, corrosion, radiation, and dynamic testing has become an important part of the development of pressure sensors. trend. The existing wire-bonded pressure chips are no longer suitable for the harsh environment. For example, the existing oil-filled sensors can be used in conductive and corrosive environments. To a large error, while its corresponding frequency is extremely low, can not be u...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L7/08G01L9/02
Inventor 王伟忠杨拥军
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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