A light-emitting diode epitaxial wafer and its manufacturing method

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a production method thereof and belongs to the field of semiconductor technology. The epitaxial wafer comprises a substrate, a bufferlayer, an undoped GaN layer, an N-type layer, a stress releasing layer, an active layer, an electron blocking layer and a P-type layer, wherein the buffer layer, the undoped GaN layer, the N-type layer, the stress releasing layer, the active layer, the electron blocking layer and the P-type layer are sequentially stacked on the substrate. The stress releasing layer comprises multiple GaN layers and InGaN layers grown periodically and alternately, and In components in each InGaN layer are gradually increased first and then gradually decreased along the growing direction of the InGaN layer. TheIn components, close to the corresponding GaN layer, in each InGaN layer are low, lattices between each InGaN layer and the corresponding GaN layer can be better matched, therefore, pressure stress generated between each InGaN layer and the corresponding GaN layer can be reduced, the crystal quality of the stress releasing layer is improved, and then the light-emitting efficiency of an LED is improved. Meanwhile, the content of the In components in the middle of each InGaN layer is high, and therefore the pressure stress between the N-type layer and the active layer can be effectively released.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight and so on. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate and a buffer layer stacked on the substrate in sequence, an undoped GaN layer, an N-type layer, an active layer, and an electron blocking layer. and P-type layer. When a current flows through the epitaxial layer, the holes in the P-type layer and the electrons in the N-type layer will m...

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Problems solved by technology

[0005] Although the stress release layer can release the stress between the N-type layer and the active layer, due to the large lattice mismatch between the GaN layer and the InGaN layer in the stress release layer, the inside of the stress release layer will also Compressive stress is generated, which makes the crystal quality of the grown stress release layer poor, resulting in low luminous efficiency of the LED

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