Memory and forming method thereof, and selection method of storage unit of memory

Abstract

The invention relates to a memory and a forming method thereof, and a selection method of a storage unit of a memory. The forming method of the memory comprises the following steps: a storage base isprovided; the storage base comprises a substrate and a storage stacking structure formed on the front side of the substrate; a channel column structure and a separation wall for penetrating the storage stacking structure into the surface of the substrate are formed in the storage stacking structure; the back of the substrate is thinned; a dielectric layer is formed on the thinned back of the substrate; a contact part that penetrates the dielectric layer and is connected to the bottom of the channel column structure is formed; source lines are formed on the dielectric layer; and, the contact part located in the same one row is connected with the same one source line. The method provided by the invention is helpful for improving the storage density of the memory.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory, a method for forming the same, and a method for selecting memory cells of the memory. Background technique [0002] In recent years, the development of flash memory (Flash Memory) is particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Has been widely used. In order to further increase the bit density (Bit Density) of the flash memory while reducing the bit cost (Bit Cost), three-dimensional flash memory (3D NAND) technology has been developed rapidly. [0003] The existing 3D NAND memory includes a substrate and a memory stack structure formed on the surface of the substrate. A channel column structure penetrating to the surface of the substrate is formed in the memory stack structure to form a...

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Problems solved by technology

[0004] In the prior art, the memory cells of the above-mentioned 3D NAND memory need to be divided into multiple memory blocks through the partition wall that runs through the memory stack structure, and then the memory cells at specific positions are selected through the conduction of the common source contact in each memory block. The common source contact and the partition wall will occupy a large amount of memory chip area, which reduces the memory cell density, and the selection method of the memory cell is more complicated

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