A tunable two-band thz absorber based on Fermi Dirac material

A technology of absorber and frequency band, which is applied in the field of adjustable two-band THz absorber, can solve the problems of high cost, increase the difficulty and cost of production, limit the scope of application of the absorber, etc., and achieve the effect of high absorption rate

Active Publication Date: 2021-01-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, in the design of terahertz wave absorbing devices, the tunable function is mainly realized by changing the structural geometric parameters, which not only limits the scope of application of the absorber, but also has a high cost
In addition, the currently designed terahertz absorbers are basically three-layer or even more than three-layer structures, which increases the difficulty and cost of production

Method used

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  • A tunable two-band thz absorber based on Fermi Dirac material
  • A tunable two-band thz absorber based on Fermi Dirac material
  • A tunable two-band thz absorber based on Fermi Dirac material

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Embodiment 1

[0027] An adjustable two-band THz absorber based on Fermi Dirac material, comprising a lattice unit composed of an absorbing layer 1 and a reflective layer 2 stacked up and down tightly, the absorbing layer 1 is a photonic crystal, and the reflective layer 2 is a Dirac material.

[0028] The absorbing layer 1 is a circular cylinder structure, wherein the hollow channel at the center of the circular cylinder structure is connected to the top surface of the reflective layer 2, and the reflective layer 2 is a rectangular structure, wherein the inner circle of the absorbing layer 1 The projections of all fall into the top surface of the reflective layer, and the projections of the outer circle of the absorbing layer 1 all fall into the top surface of the reflective layer.

[0029] The height of the circular cylinder structure is 30 μm-40 μm, the outer radius of the circular cylinder structure is R1=35 μm-40 μm, and the inner circle radius of the circular cylinder structure is R2=1...

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Abstract

The invention discloses an adjustable two-band THz absorber based on a Fermi Dirac material, which comprises a lattice unit composed of an absorption layer 1 and a reflection layer 2 stacked up and down and closely fitted together, the absorption layer 1 is a photonic crystal, and the absorption layer 1 is a photonic crystal. The reflective layer 2 is a Dirac material. The metamaterial absorber of the present invention is different from the traditional three-layer structure of "metal-dielectric-metal" configuration. Traditional absorbers based on gold, silver, copper and other precious metals can only be designed on fixed absorption peaks. To tune the absorption peaks to other frequency regions, a careful re-optimization of the absorber geometry is necessary. The present invention not only combines Dirac materials to realize tunable frequency, but also only combines photonic crystals, so its structure is simpler, especially there is no pattern of metal structure, the cost is low, and it is easy to process.

Description

technical field [0001] The invention relates to the field of metamaterial absorbers, in particular to an adjustable two-band THz absorber based on Fermi Dirac materials. Background technique [0002] Terahertz (THz) waves are electromagnetic waves with a frequency between 0.1THz and 10THz. Terahertz waves have the characteristics of low photon energy, high temporal and spatial coherence, and strong penetration. They are used in nondestructive testing, medical imaging, electronic countermeasures, and radar , remote sensing, outer space broadband communication and other fields have broad application prospects. However, it is difficult for conventional materials to generate electromagnetic responses in the terahertz band. [0003] Electromagnetic metamaterials are a new type of artificially synthesized materials with extraordinary electromagnetic properties. Purpose. Realize new electromagnetic properties such as negative refractive index, perfect transmission and perfect ab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q17/00G02B5/00G02B1/00
CPCG02B1/002G02B5/003H01Q17/007
Inventor 阙隆成孟威威闵道刚罗昕杰吕坚蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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