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Surface sulfur vacancy defect mode structure-enriched sulfur-indium-zinc photocatalyst and preparation method thereof

A photocatalyst and vacancy defect technology, applied in chemical instruments and methods, physical/chemical process catalysts, inorganic chemistry, etc., can solve the problem of high photo-generated electron-hole recombination rate, achieve low cost, simple modification means, improve The effect of photocatalytic hydrogen production performance

Active Publication Date: 2019-04-05
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention induces a large number of sulfur vacancy defects on the surface of the sulfur indium zinc photocatalyst through high temperature and high pressure hydrogenation treatment, realizes the modification of the surface structure of the sulfur indium zinc photocatalyst, and solves the problem of sulfur indium zinc photocatalyst to a large extent. The high recombination rate of photogenerated electron-hole pairs of zinc photocatalysts also appropriately improves the spectral absorption performance of sulfur indium zinc photocatalysts, thereby improving the photocatalytic hydrogen production efficiency of sulfur indium zinc photocatalysts

Method used

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  • Surface sulfur vacancy defect mode structure-enriched sulfur-indium-zinc photocatalyst and preparation method thereof
  • Surface sulfur vacancy defect mode structure-enriched sulfur-indium-zinc photocatalyst and preparation method thereof
  • Surface sulfur vacancy defect mode structure-enriched sulfur-indium-zinc photocatalyst and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Firstly, the sulfur indium zinc photocatalyst powder was prepared by hydrothermal method, the specific process was as follows: 2 mmol of ZnCl 2 , 4mmol of In(NO 3 ) 3 ·H 2 O and 8 mmol of CH 3 CSNH 2 According to the stoichiometric molar ratio of 1:2:4, it was sequentially dissolved into the aqueous solution, and ultrasonically treated for 30 minutes to prepare a precursor solution; after that, the precursor solution was transferred to a hydrothermal reaction kettle and reacted at 160 degrees for 6 hours; After the reaction, cool to room temperature, collect the reaction product by suction filtration, wash several times with absolute ethanol and deionized water, and dry overnight in a vacuum oven to prepare sulfur indium zinc photocatalyst powder, which is marked as ZIS.

[0020] (2) On the premise of obtaining the above-mentioned sulfur indium zinc photocatalyst powder, further prepare a sulfur indium zinc photocatalyst rich in surface sulfur vacancy defect sta...

Embodiment 2

[0022] (1) The preparation process of the sulfur-indium-zinc photocatalyst powder is the same as in Example 1;

[0023] (2) On the premise of obtaining the above-mentioned sulfur indium zinc photocatalyst powder, further prepare a sulfur indium zinc photocatalyst rich in surface sulfur vacancy defect state structure by means of high temperature and high pressure hydrogenation treatment. The hydrogenation treatment process is specifically: Weigh 0.5 Put 1 gram of sulfur indium zinc photocatalyst powder into the hydrogenation reaction device. After the device is sealed, it is evacuated to below 10 Pa, and then the device is heated to 400 degrees at a heating rate of 10 degrees per minute. Fill high-purity hydrogen (purity greater than 99.999%) until the hydrogen pressure reaches 2.0 MPa; then carry out the hydrogenation reaction for a period of 6 hours under the condition of maintaining 400 degrees and 2.0 MPa high temperature and high pressure; after the reaction is completed, t...

Embodiment 3

[0025] (1) The preparation process of the sulfur-indium-zinc photocatalyst powder is the same as in Example 1;

[0026](2) On the premise of obtaining the above-mentioned sulfur indium zinc photocatalyst powder, further prepare a sulfur indium zinc photocatalyst rich in surface sulfur vacancy defect state structure by means of high temperature and high pressure hydrogenation treatment. The hydrogenation treatment process is as follows: weigh 1.0 Put 1 gram of sulfur indium zinc photocatalyst powder into the hydrogenation reaction device. After the device is sealed, it is evacuated to below 10 Pa, and then the device is heated to 250 degrees at a heating rate of 5 degrees per minute. Fill high-purity hydrogen (purity greater than 99.999%) until the hydrogen pressure reaches 3.0 MPa; then carry out the hydrogenation reaction for a period of 20 hours under the condition of maintaining 250 degrees and 3.0 MPa high temperature and high pressure; after the reaction is over, wait for ...

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Abstract

The invention belongs to the technical field of semiconductor photocatalysis and particularly relates to a surface sulfur vacancy defect mode structure-enriched sulfur-indium-zinc (ZnIn2S4) photocatalyst and a preparation method thereof. The preparation method of the surface sulfur vacancy defect mode structure-enriched sulfur-indium-zinc photocatalyst is characterized in that after high-temperature and high-pressure hydrogenation, a large number of sulfur vacancy defect mode structures are formed on the surface of the sulfur-indium-zinc photocatalyst. Compared with unmodified sulfur-indium-zinc photocatalysts, the surface sulfur vacancy defect mode structure-enriched sulfur-indium-zinc photocatalyst has a large number of the sulfur vacancy defect mode structures on the surface, surface sulfur vacancy defects can form photo-generated carrier capturing 'traps', separation of photo-generated charges can be effectively promoted, compounding of photo-generated electron-hole pairs can be reduced, and further the photocatalytic hydrogen production performance is greatly improved. The surface sulfur vacancy defect mode structure-enriched sulfur-indium-zinc photocatalyst and the preparation method thereof provide a new idea and a new way for designing and developing novel efficient visible light catalysts.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photocatalysis, and in particular relates to a sulfur indium zinc photocatalyst rich in surface sulfur vacancy defect state structure and a preparation method thereof. Background technique [0002] Utilizing solar energy to realize photocatalytic decomposition of water to produce hydrogen is a very effective means to solve the current global fossil energy shortage and environmental pollution problems. It is generally believed that the photocatalytic water splitting hydrogen production process mainly involves the following key steps: photocatalyst spectral absorption, photogenerated carrier separation and transport, photocatalytic interfacial reaction, etc. Obviously, the efficiency of photocatalytic hydrogen production largely depends on the type of photocatalyst, the separation efficiency of photogenerated carriers, and the surface reactivity. In recent years, sulfur indium zinc (ZnIn 2 S...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04C01B3/04
CPCC01B3/042B01J27/04C01B2203/0277C01B2203/1076B01J35/39Y02E60/36
Inventor 陈达王砚泽秦来顺黄岳祥梁俊辉
Owner CHINA JILIANG UNIV
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