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Image sensor pixel unit structure and method for improving quantum efficiency

An image sensor and pixel unit technology, applied in the field of image sensors, can solve the problems of inability to achieve photoelectric conversion, low quantum efficiency, etc., and achieve the effects of improving near-infrared quantum efficiency and increasing the absorption ratio

Active Publication Date: 2021-03-02
上海微阱电子科技有限公司
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  • Application Information

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Problems solved by technology

Since the interlayer dielectric 12 in the semiconductor process usually uses light-transmitting materials such as silicon dioxide, the near-infrared incident light will directly pass through the silicon substrate 10 and the interlayer dielectric 12, and normal photoelectric conversion cannot be achieved, so the quantum efficiency is extremely low

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  • Image sensor pixel unit structure and method for improving quantum efficiency
  • Image sensor pixel unit structure and method for improving quantum efficiency
  • Image sensor pixel unit structure and method for improving quantum efficiency

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Embodiment Construction

[0038] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0039] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0040] In the following specific embodiments of the present invention, please refer to figure 2 , figure 2 It is a structural schematic diagram of an image sensor pixel unit with improved quantum efficiency according to a preferred embodiment of the present invention. Such as figure 2 As shown, an image sensor pixel unit structure with improved...

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Abstract

The invention discloses a pixel unit structure of an image sensor with improved quantum efficiency, which includes a photodiode and a transfer tube gate arranged on the front side of a silicon substrate, a metal interconnection layer and a light-condensing reflection layer arranged in an interlayer dielectric layer, The light-gathering reflective layer is provided with a light-gathering layer and a metal reflective layer, and is located correspondingly below the photodiode. The light-gathering layer has a plurality of light-gathering protrusions in an array, and each light-gathering protrusion has an arc-shaped convex surface facing the photodiode. , used to condense the light incident from the back of the silicon substrate, the metal reflective layer has a continuous arc-shaped structure corresponding to the arc-shaped convex surface of each light-condensing protrusion, and is used to reflect the condensed incident light again In the photodiode, the absorption ratio of near-infrared light in the silicon substrate is greatly increased, and the near-infrared quantum efficiency of the back-illuminated pixel unit is improved. The invention also discloses a method for forming the pixel unit structure of the image sensor with improved quantum efficiency.

Description

technical field [0001] The present invention relates to the technical field of image sensors, and more particularly, to a pixel unit structure and a forming method of a back-illuminated image sensor with improved quantum efficiency. Background technique [0002] An image sensor refers to a device that converts optical signals into electrical signals. Generally, large-scale commercial image sensor chips include charge-coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) image sensor chips. [0003] Compared with traditional CCD sensors, CMOS image sensors have the characteristics of low power consumption, low cost and compatibility with CMOS technology, so they are more and more widely used. CMOS image sensors are now not only used in consumer electronics, such as miniature digital cameras (DSC), mobile phone cameras, video cameras and digital single-lens reflex (DSLR), but also in automotive electronics, monitoring, biotechnology and medical fields. . ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/1464H01L27/14685
Inventor 顾学强
Owner 上海微阱电子科技有限公司
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