Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Voltage reference circuit

A voltage reference and circuit technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of reference voltage temperature coefficient deviation from zero, increase or decrease, etc., achieve strong loop control ability, improve Temperature characteristics, the effect of reducing the temperature drift coefficient

Active Publication Date: 2019-03-19
SHENZHEN NANYUN MICROELECTRONICS CO LTD +1
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Due to the current I PTAT has a positive temperature coefficient, it produces a voltage drop across the trim resistor V Trim Also has a positive temperature coefficient, simply increasing or decreasing the trimming resistor will make V Trim The temperature coefficient of the reference voltage also increases or decreases, and the positive and negative temperature coefficients can no longer cancel each other out, causing the temperature coefficient of the reference voltage to deviate further from zero.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Voltage reference circuit
  • Voltage reference circuit
  • Voltage reference circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] based on figure 2 The circuit connection relationship of the embodiment, the voltage reference circuit of this embodiment also includes a resistance voltage trimming circuit and a negative temperature coefficient current compensation circuit.

[0039] image 3 It is the NMOS tube-resistor pair of the resistance voltage trimming circuit of this embodiment. The resistor voltage trimming circuit is composed of resistors R7~R10 and NMOS transistors NM1~NMOS transistor NM4. One end of R7 is connected to the emitter of the triode Q1, and the other end of R7 Connect one end of R8, R9 and R10 in sequence, the other end of R10 is connected to the other end of resistor R1, and the drain and source of NM1 ~ NMOS transistor NM4 are sequentially connected in parallel to both ends of resistor R7 ~ resistor R10;

[0040] Figure 4 The negative temperature coefficient current compensation circuit of this embodiment includes a second current mirror made up of PMOS transistors PM4 and...

Embodiment 2

[0064] Image 6 The negative temperature coefficient current compensation circuit of this embodiment is different from the first embodiment in that the negative temperature coefficient current compensation circuit also includes NMOS transistors NM9-NM18, and the negative temperature coefficient current compensation circuit communicates with the resistor voltage correction circuit through the NMOS transistors NM7-NM18. The drain of NM8 is connected to the end of the resistor voltage trimming circuit through the source and drain of NM9, the drain of NM10 is connected to the other end of resistor R1 through the source and drain of NM11, the source and drain of NM12 are connected to the other end of resistor R1, the drain of NM13 is connected to the source and drain of NM14, The source and drain of NM15 are connected to the other end of resistor R1, the drain of NM16 is connected to the other end of resistor R1 through the source and drain of NM17, the source and drain of NM18 are ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a voltage reference circuit comprising a band-gap reference module, an operational amplifier, a resistance voltage trimming circuit and a negative temperature coefficient current compensation circuit. The band-gap reference module includes resistors R1-R4 and transistors Q1-Q3. The first input end and the second input end of the operational amplifier are respectively connected to collectors of Q2 and Q3, and the resistance voltage trimming circuit is connected in series between Q1 and R1. The negative temperature coefficient current compensation circuit is connected tothe end of the resistance voltage trimming circuit. The voltage reference circuit introduces the trimming circuit and the negative temperature coefficient current compensation circuit, so that the reference voltage can meet the requirements for progress indexes at any process angle, and the temperature drift coefficient can be effectively improved.

Description

technical field [0001] The invention relates to a voltage reference circuit, in particular to a voltage reference circuit with high precision and low temperature drift, which is suitable for loop control of a switching power supply. Background technique [0002] In the field of integrated circuits, voltage reference circuits play a very important role and are widely used in analog integrated circuits and digital integrated circuits; the performance of voltage reference circuits often affects the performance of the entire integrated circuit system. The reference voltage of an ideal voltage reference circuit is not affected by the operating voltage, temperature and device process deviation (process angle) in the circuit, and always maintains a stable voltage value. [0003] Usually, the voltage reference circuit generally adds the positive temperature coefficient voltage and the negative temperature coefficient voltage with appropriate parameter coupling, so that the temperatu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 於昌虎李依娇
Owner SHENZHEN NANYUN MICROELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com