Three dimensional memory element and manufacturing method thereof

Abstract

The invention provides a three dimensional (3D) memory element. The three dimensional (3D) memory element comprises a substrate, a multi-layers stack structure, and a dielectric material. The substrate has at least one sunken part extending from the surface of the substrate into the substrate in a first direction. The multi-layers stack structure includes a plurality of conductive layers and a plurality of insulating layers staggered on the bottom surface of the sunken part in parallel with the first direction; wherein the multi-layers stack structure has at least one alcove passing through the conductive layers and the insulating layers in the first direction, the alcove has a bottom cross-sectional dimension and an opening dimension perpendicular to the first direction, and the bottom cross-sectional dimension is substantially larger than the opening dimension. The dielectric material is at least partially filled in the alcove.

Description

Technical field [0001] The invention relates to a memory element and a manufacturing method thereof. In particular, it relates to a three-dimensional (3D) memory device and a manufacturing method thereof. Background technique [0002] With the development of electronic technology, semiconductor memory components have been widely used in electronic products, such as MP3 players, digital cameras, notebook computers, mobile phones, etc. At present, the demand for memory components is developing toward smaller sizes and larger storage capacities. In order to meet the demand for such high device density, a variety of three-dimensional memory devices with different structures have been developed. [0003] A typical three-dimensional memory device, such as a non-volatile memory (Non-volatile memory, NVM) device, includes a three-dimensional memory cell array composed of a series of memory cells with vertical channels (VC). The method for forming a three-dimensional memory device includ...

AI Technical Summary

Problems solved by technology

However, due to the intrinsic stress (intrinsic stress) generated by the lattice mismatch between different materials in the multilayer stack structure, and the thermal stress (thermal stress) generated by the temperature change in the process, the substrate, such as silicon crystal round, curved

As a result, other material layers subsequently formed on the multi-layer laminated structure cannot be accurately aligned, which seriously affects the process qualification rate and device performance of the three-dimensional memory device.

Increasing the number of stacked layers in the multi-layer stacked structure will make this problem more serious

Images