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A kind of preparation method of nitrogen-containing semiconductor graphite

A semiconductor and graphite technology, applied in the field of preparation of nitrogen-containing semiconductor graphite, can solve the problems of difficult preparation, high cost, complex process, etc., and achieve the effect of easy scale and low cost

Active Publication Date: 2022-03-04
HUAQIAO UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are many preparation methods for graphene, such as: micromechanical exfoliation, pyrolytic silicon carbide, vapor phase chemical deposition, redox, chemical synthesis and other methods have many problems such as difficult preparation, high cost, complicated process, and many defects. Graphene is widely used in electronic circuits and other fields

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Mix natural graphite particles and nitrogen source (at least one of silicon nitride, titanium nitride and nitrogen carbide) evenly, and then heat the natural graphite particles and nitrogen source in a high-temperature furnace. The temperature of the high-temperature furnace is 2800 ° C, constant temperature The time is 30 minutes, wherein the mass ratio of the effective content of nitrogen (the effective content of nitrogen refers to the mass of nitrogen element in the nitrogen source) to the above-mentioned natural graphite particles is 10:100, and the nitrogen-containing semiconductor graphite is obtained after cooling in a high-temperature furnace. The nitrogen-containing semiconductor graphite is used as a channel material to prepare a field effect tube, and the semiconductor comprehensive tester keithley 4200A SCS is used to test the graphite field effect tube. The nitrogen-doped graphite material obtained by this method is N-type semiconductor graphite. The Raman ...

Embodiment 2

[0023] Mix natural graphite particles and nitrogen source (at least one of silicon nitride, titanium nitride and nitrogen carbide) evenly, and then heat the natural graphite particles and nitrogen source in a high-temperature furnace. The temperature of the high-temperature furnace is 3000 ° C, constant temperature The time is 30 minutes, wherein the mass ratio of the effective content of nitrogen (the effective content of nitrogen refers to the mass of nitrogen element in the nitrogen source) to the above-mentioned natural graphite particles is 10:100, and the nitrogen-containing semiconductor graphite is obtained after cooling in a high-temperature furnace. The nitrogen-containing semiconductor graphite is used as a channel material to prepare a field effect tube, and the semiconductor comprehensive tester keithley 4200A SCS is used to test the graphite field effect tube. The nitrogen-doped graphite material obtained by this method is N-type semiconductor graphite. The Raman ...

Embodiment 3

[0025] Mix natural graphite particles and nitrogen source (at least one of silicon nitride, titanium nitride and nitrogen carbide) evenly, and then heat the natural graphite particles and nitrogen source in a high-temperature furnace. The temperature of the high-temperature furnace is 3000 ° C, constant temperature The time is 100min, wherein the mass ratio of the effective content of nitrogen (the effective content of nitrogen refers to the mass of nitrogen element in the nitrogen source) to the above-mentioned natural graphite particles is 10:100, and the nitrogen-containing semiconductor graphite is obtained after cooling in a high-temperature furnace. The nitrogen-containing semiconductor graphite is used as a channel material to prepare a field effect tube, and the semiconductor comprehensive tester keithley 4200A SCS is used to test the graphite field effect tube. The nitrogen-doped graphite material obtained by this method is N-type semiconductor graphite. The Raman spec...

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PUM

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Abstract

The invention discloses a preparation method of nitrogen-containing semiconductor graphite. In the invention, the graphite is subjected to heat treatment in a temperature environment of 2000-3000° C., the activity of carbon atoms in the graphene plane is greatly increased, and the nitrogen-containing nitrogen source is heated at a high temperature. Among them, the nitrogen element diffuses to the graphite particles driven by the concentration gradient, and the atomic diameter of nitrogen is not much different from the carbon atomic diameter. At high temperature, nitrogen atoms replace carbon atoms, realizing the substitutional doping of nitrogen atoms, and obtaining nitrogen elements In situ substitution of doped semiconducting graphite.

Description

technical field [0001] The invention belongs to the technical field of graphite modification, and in particular relates to a preparation method of nitrogen-containing semiconductor graphite. Background technique [0002] In 2004, Geim et al. used the micromechanical exfoliation method to prepare a single-layer graphene sheet for the first time, and used graphene as a channel material to prepare a field-effect transistor, and found that graphene has extremely high carrier mobility. As the first two-dimensional material discovered, graphene has attracted the attention and research of a large number of scientific researchers. The honeycomb two-dimensional planar crystal composed of a layer of carbon atoms has excellent properties, such as: extremely high carrier mobility and saturation drift velocity, submicron ballistic transport performance, excellent mechanical properties and extremely high thermal conductivity. Conductivity, high transparency. As the line width of silicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/21H01L29/167
CPCH01L29/167C01B32/21
Inventor 李四中
Owner HUAQIAO UNIVERSITY
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