Ferroelectric memory cell recovery

Abstract

This application is directed to ferroelectric memory cell recovery. Methods, systems, and apparatus for recovering fatigued ferroelectric memory cells are described. A recovery voltage may be applied to a ferroelectric memory cell fatigued by repeated access (read or write) operations. The recovery voltage can have a greater amplitude than the access voltage, and can include multiple voltage pulses or a constant voltage. The restore operation can be performed in the background while the memory array is operating, or it can be performed when the host device is not actively using the memory array. The recovery operation may be performed periodically, or it may comprise a series of discrete pulses spread over several instances.

Description

[0001] cross reference [0002] This patent application claims priority to PCT Application No. PCT / US2017 / 035423, filed June 1, 2017, entitled "Ferroelectric Memory Cell Recovery," which claims Mariani et al., U.S. Patent Application No. 15 / 179,695, filed June 10, 2016, entitled "Ferroelectric Memory Cell Recovery," which is assigned to the present assignee and each of are expressly incorporated herein by reference in their entirety. technical field [0003] The technical field relates to ferroelectric memory cell recovery. Background technique [0004] The following relates generally to memory devices, and more specifically to recovery of fatigued ferroelectric memory cells. [0005] Memory devices are widely used to store information in various electronic devices such as computers, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming different states of the memory device. For example, a binary device has two sta...

AI Technical Summary

Problems solved by technology

Fatigued ferroelectric materials can reduce the ability of FeRAM cells to store charge, which can render the memory cells inoperable

Images