An equivalent circuit model parameter extracting method for a piezoelectric bimorph

An equivalent circuit model, piezoelectric bimorph technology, applied in the direction of electrical digital data processing, CAD circuit design, special data processing applications, etc., can solve the problem of expensive measuring instruments and achieve the effect of low cost

Inactive Publication Date: 2019-02-01
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Some existing circuit parameter extraction methods rely on measuring the vibration state of the piezoelectric bimorph to calculate and determine the parameters, and the required measuring instruments such as Doppler laser vibrometers are expensive

Method used

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  • An equivalent circuit model parameter extracting method for a piezoelectric bimorph
  • An equivalent circuit model parameter extracting method for a piezoelectric bimorph
  • An equivalent circuit model parameter extracting method for a piezoelectric bimorph

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Embodiment

[0056] In order to make the purpose, technical solutions and advantages of the present invention more clear, the following will give a specific description of the implementation of the present invention in conjunction with examples. Using the Mide PPA2014 model piezoelectric bimorph, the experimental determination method of 5 independent parameters is as follows: fix one end of the piezoelectric bimorph on the vibration source, and keep the other end free, keep a constant 1g sinusoidal vibration acceleration amplitude, and obtain different loads by sweeping frequency Resistance R L The relationship between the output voltage of the piezoelectric bimorph and the vibration frequency is shown below. Short circuit resonant frequency f sc =673Hz is the frequency value corresponding to the maximum output voltage when the load resistance is 50Ω (approximate short circuit); the open circuit resonant frequency f oc =696Hz is the frequency value corresponding to the maximum output vol...

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Abstract

An equivalent circuit model parameter extracting method for a piezoelectric bimorph includes such steps as fixing one end of piezoelectric bimorph on vibration source, freeing that other end, keepingconstant sinusoidal vibration acceleration amplitude a, sweeping frequency to obtain relationship curve between output voltage of piezoelectric generator and vibration frequency under different load resistances RL, and extracting parameters of equivalent circuit model of piezoelectric bimorph. The short-circuit resonant frequency fsc, open-circuit resonant frequency foc, static capacitance Cmc, mechanical quality factor Qoc, mechanical quality factor QML, maximum power value Popt, short-circuit resonant voltage VML (Omega sc) are determined. The equivalent inductance Lm, the equivalent capacitance Cm, the equivalent resistance Rm, the equivalent input stress VF, the piezoelectric coupling coefficient A and the static capacitance Cmc are obtained. The invention can accurately describe the relationship between the output voltage characteristic of the piezoelectric bimorph and the load, the ambient vibration frequency and the acceleration, and the electric measuring instrument required for measuring is low in cost.

Description

technical field [0001] The invention relates to the field of vibration environment energy collection technology and circuit design, more specifically, relates to a piezoelectric bimorph equivalent circuit model parameter extraction method. Background technique [0002] Vibration energy harvesting devices can convert the vibration energy widely present in the environment into electrical energy. The energy conversion methods are divided into three types: electrostatic, electromagnetic and piezoelectric according to the different electromechanical conversion principles. The electrostatic type is realized by the capacity change of the variable capacitor due to vibration. The most attractive feature of this method is that it has IC compatibility, and it can be manufactured by silicon micro-processing technology and mass-produced. But in order to realize voltage constraint or charge constraint across the capacitor, independent power supply support is required. Electromagnetics ge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/30G06F30/367G06F2119/06
Inventor 马建国赵升周绍华
Owner TIANJIN UNIV
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