Epitaxial wafer of a light emitting diode and a preparation method thereof

Abstract

The invention discloses an epitaxial wafer of a light emitting diode and a preparation method thereof, belonging to the field of light emitting diode manufacturing. The barrier of the AlGaN barrier layer disposed in the first superlattice structure close to the N-type GaN layer side is higher than the barrier of the GaN barrier layer in the second superlattice structure between the first superlattice structure and the electron blocking layer. The AlGaN barrier layer may block most of the electrons in the InGaN well layer in the first superlattice structure. In this case, holes partly from theP-type GaN layer enter the active layer, It doesn't immediately recombine with electrons to emit light, under the condition that the hole migration rate is constant, the depth at which holes can enterthe active layer increases, in addition to emitting light recombination with electrons trapped in the InGaN well layer in the first superlattice structure, Some holes can also recombine with some electrons which have migrated into the second superlattice structure, and the number of holes which have the opportunity to recombine with electrons in the active layer is increased, which finally improves the luminescence efficiency of the light emitting diodes.

Description

technical field [0001] The invention relates to the field of light-emitting diode manufacturing, in particular to an epitaxial wafer of a light-emitting diode and a preparation method thereof. Background technique [0002] Light-emitting diodes are semiconductor diodes that can convert electrical energy into light energy. They have the advantages of small size, long life, and low power consumption. They are currently widely used in automotive signal lights, traffic lights, display screens, and lighting equipment. The epitaxial wafer is the basic structure for making light-emitting diodes. The structure of the epitaxial wafer includes a substrate and an epitaxial layer grown on the substrate. Among them, the structure of the epitaxial layer mainly includes: a low-temperature GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an active layer, an electron blocking layer and a P-type GaN layer grown sequentially on the substrate. [0003] Generally, the active layer i...

AI Technical Summary

Problems solved by technology

The electrons concentrated in the quantum well near the electron blocking layer and the holes entering the active layer recombine and emit light in the quantum well near the electron blocking layer, so that the holes from the P-type GaN layer cannot penetrate deep into the active layer Composite light emission with electrons

The area for recombination light emission in the active layer is concentrated in individual quantum wells close to the electron blocking layer, the quantum wells in the active layer are not fully utilized, and the luminous efficiency of the light-emitting diode is low

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