A Method for Measurement of Semiconductor Material Properties Based on Free Carrier Absorption Imaging

Abstract

The invention relates to a measurement method for semiconductor material characteristics based on free carrier absorption imaging and solves the problems of defect of an existing semiconductor material characteristic measurement technology. The method adopted by the invention comprises the steps of (1) vertically irradiating continuous detection laser light to a surface of a measured semiconductorsample, measuring by a near-infrared camera and recording the transmitted detection light intensity spatial distribution S0 at this time by a computer; (2) vertically irradiating the focused continuous pumping laser light to a center position of a sample detection light radiation region, measuring by the near-infrared camera and recording the transmitted detection light intensity spatial distribution S1 at this time by the computer, wherein the size of a detection laser light beam incident to the surface of the sample is greater than the size of a pumping laser light beam focusing on the surface of the sample; (3) processing the transmitted detection light intensity spatial distribution imaging results S0 and S1 obtained in steps (1) and (2), that is S=(S1-S0) / S0; and (4) intercepting measurement data having different distances to a peak value along the peak position of the free carrier absorption imaging result to obtain multiple characteristic parameters of the to-be-measured sample.

Description

technical field [0001] The invention relates to the technical field of semiconductor material characteristic measurement, in particular to a semiconductor material characteristic measurement method based on free carrier absorption imaging. Background technique [0002] The development of semiconductor raw materials in the direction of large diameter and low defect, and the continuous improvement of the integration level of microelectronic devices have prompted higher and higher requirements for material processing technology and performance testing. In order to ensure that materials can be used in devices and improve device stability and yield, accurate and rapid on-line monitoring and non-destructive characterization of material properties are required in the material processing process. Photo-Carrier Radiation (PCR: Photo-Carrier Radiometry) technology and Modulated Free-Carrier Absorption (MFCA: Modulated Free-Carrier Absorption) technology are two optical non-destructive...

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a semiconductor material characteristic measurement method based on free carrier absorption imaging in order to solve the deficiencies of the existing semiconductor material characteristic measurement technology

Images