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A Broadband Metamaterial Terahertz Absorber Based on Optical Switch

A technology of light-controlled switches and wave absorbers, which is applied in the field of broadband metamaterial terahertz wave absorbers and ultra-wideband terahertz wave absorbers. The effect of wide bandwidth and simple structure

Active Publication Date: 2021-08-03
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Ordinary microwave radar is often ineffective in detecting stealth weapons with a small radar cross-section. Therefore, for a long time, people have made no progress in the research of radar stealth technology.

Method used

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  • A Broadband Metamaterial Terahertz Absorber Based on Optical Switch
  • A Broadband Metamaterial Terahertz Absorber Based on Optical Switch
  • A Broadband Metamaterial Terahertz Absorber Based on Optical Switch

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Embodiment Construction

[0029] Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:

[0030] This embodiment proposes a broadband metamaterial terahertz absorber based on an optical switch, its structure is as follows Figure 1 to Figure 5 As shown, it includes a bottom metal gold reflector, and the bottom reflector is provided with a dielectric substrate. The dielectric substrate is a material with a dielectric constant of 1.28 and a loss tangent of 0.81. The dielectric substrate is provided with an optical control semiconductor The photoconductive semiconductor silicon patch among the silicon helical structure patch, the metal gold patch and the metal patch has a metal gold helical structure inside the dielectric substrate. The dielectric constant of the photoconductive semiconductor silicon patch is 11.9, and the conductivity is 1, and the conductivity of metal gold is 45610000S / m.

[0031] The absorber is composed of a two-laye...

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Abstract

The present invention proposes a broadband metamaterial terahertz absorber based on an optical control switch, which includes a bottom metal reflector and a dielectric substrate above it, the dielectric substrate is covered with a periodic structural unit, and the periodic structure The unit is composed of photoconductive semiconductor silicon patches and metal patches, including a double-armed spiral structure located in the center of the dielectric substrate and a double Y-shaped strip structure uniformly and symmetrically distributed along the periphery of the dielectric substrate. The absorber has a good absorption effect under both TE wave and TM wave. Different conductivity represents different levels of photoexcitation, so when the conductivity of the surface photoconductive semiconductor silicon can be adjusted, the absorption effect can be effectively adjusted. , so that the absorption frequency domain with an absorption rate of more than 90% covers almost the entire THz band. The invention also has the characteristics of simple structure, strong functionality, extremely wide absorption bandwidth and the like.

Description

technical field [0001] The invention relates to an ultra-broadband terahertz wave absorber, in particular to a light-controlled switch-based broadband metamaterial terahertz wave absorber, which belongs to the field of radio communication and terahertz devices. Background technique [0002] Terahertz generally refers to electromagnetic waves with a frequency in the range of 0.1 to 100 terahertz. With the development of terahertz technology, the functions of some microwave devices have been updated to a certain extent. General microwave radar is often ineffective in detecting stealth weapons with a small radar cross-section. Therefore, for a long time, people have not made any progress in the research of radar stealth technology. However, terahertz, which is in the transition region of the electromagnetic spectrum, has a very short wavelength, contains abundant frequencies, and has a wide bandwidth, which can be used to detect smaller targets and more precisely locate, and it...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q17/00G02B5/00
CPCG02B5/003H01Q17/008
Inventor 章海锋杨靖张浩
Owner NANJING UNIV OF POSTS & TELECOMM
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