Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A manufacture process of SONOS device

A manufacturing process and device technology, which is applied in the field of SONOS device manufacturing process, can solve the problems that the selection tube and the storage tube do not share the source and drain regions and are susceptible to interference, so as to realize self-aligned etching, reduce the area, and reduce the selection tube effect

Active Publication Date: 2019-01-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 2-T SONOS applications, since the source and drain terminals of the SONOS storage tube are directly connected to a fixed voltage during operation, they are susceptible to interference
[0004] Although the above-mentioned SONOS storage tube fully isolated device structure is composed of three devices, there is no shared source and drain region between the selection tube and the storage tube.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A manufacture process of SONOS device
  • A manufacture process of SONOS device
  • A manufacture process of SONOS device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Described self-aligned SONOS device manufacture process method is in the following embodiment, implementation process is as follows:

[0025] Step 1, see Figure 4 A first oxide layer 17 is formed on the upper end of the P-type substrate 1, and the oxide layer 17 is used to finally form the gate oxide layer 8 of the transistor in the logic region and the gate oxide layer 2 of the selection transistor. A first polysilicon layer 18 and a first silicon nitride layer 22 are sequentially deposited on the first oxide layer 17, and the first polysilicon layer 18 is used to form the select transistor polysilicon gate 5 and the logic region transistor polysilicon Grid 23. The first silicon nitride layer 22 is used as a reserved layer of the CMP (chemical mechanical polishing) stop layer, and its deposited thickness is

[0026] Step 2, see Figure 5 , the photolithography is opened, the first silicon nitride layer 22 is etched, and the first polysilicon layer 18 is implanted...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A manufacture method of self-aligned SONOS device is disclosed. That polysilicon gate of the selection tube is self-aligned etched, so that the size of the selection tube is not limited by photolithography, and the selection tube is favorable for reducing; The self-aligned etching of the source-drain contact hole of the memory cell is advantageous to reduce the area of the memory cell. The invention can reduce the area of the memory cell.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a manufacturing process method of a SONOS (Semiconductor-Oxide-Nitride-Oxide-Semiconductor flash memory) device. Background technique [0002] SONOS technology with low operating voltage and better CMOS process compatibility is widely used in various embedded electronic products, such as financial IC cards, automotive electronics and other applications. 2-T SONOS (2transistors two transistors store one bit of data) technology has been favored by many low-power applications due to its low power consumption. In 2-T SONOS applications, since the source and drain terminals of the SONOS storage tube are directly connected to a fixed voltage during operation, they are susceptible to interference. The use of SONOS memory tube fully isolated device structure can better suppress various interferences and improve device performance. [0003] The structure of SONOS storage...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H10B43/35
CPCH10B43/35
Inventor 许昭昭
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com