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A transfer method for large area monolayer and few-layer molybdenum disulfide film

A technology of molybdenum disulfide and transfer method, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve the problems of inability to complete the transfer of molybdenum disulfide film, the quality of molybdenum disulfide film cannot be guaranteed, and it is difficult to clean and remove. , to achieve the effect of reducing film breakage, low cost and high repetition rate

Active Publication Date: 2018-12-28
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the following three problems generally exist in the process of transferring a large-area single-layer or few-layer molybdenum disulfide film from a growth substrate to a target substrate: First, when the molybdenum disulfide film is separated from the growth substrate, due to The single-layer or few-layer molybdenum disulfide film is too thin, it is easy to break into small pieces in the solution, and it is difficult to collect; second, even if the molybdenum disulfide film and the growth substrate are not broken into small pieces during the separation process, In the process of transferring the molybdenum disulfide thin film to the target substrate, the molybdenum disulfide thin film is prone to large-area wrinkles, and it will be affected by severe stress, resulting in cracks. samples, and the quality of the molybdenum disulfide film after transfer cannot be guaranteed; thirdly, most of the current transfer methods are to spin-coat a layer of polymer film on the surface of the molybdenum disulfide film, and then clean and remove the polymer film after the transfer is completed. However, if the polymer film is too thin, it is easy to break in the solution and cannot play a corresponding role. If the polymer film is too thick, there is a problem that it is difficult to clean and remove after the transfer is completed.

Method used

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  • A transfer method for large area monolayer and few-layer molybdenum disulfide film
  • A transfer method for large area monolayer and few-layer molybdenum disulfide film
  • A transfer method for large area monolayer and few-layer molybdenum disulfide film

Examples

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Effect test

Embodiment 1

[0056] Molybdenum disulfide film (area 1mm 2 , the number of layers is 1-5 layers, and the thickness of each layer is 0.60-0.65nm) growth substrate (SiO 2 / Si substrate) is fixed on the glue leveler, drips a drop of polymethyl methacrylate phenethyl ether solution (polymethyl methacrylate concentration is 0.1g / mL) on the surface of described molybdenum disulfide film, with 2500rpm Speed ​​spin coating 40s, repeat spin coating operation, totally spin coating 6 times, then solidify 20min under the condition of 80 ℃, form polymer film on the surface of described molybdenum disulfide film (thickness of described polymer film is 180nm );

[0057] BOPP biaxially oriented polypropylene scotch tape (glue composition is butyl ester, glue layer thickness is 25 μ m) is pasted on the surface of polymer film, do not leave air bubble, with scissors the tape of redundant part around described polymer film is cut off, Ensure that the size of the polymer film is consistent with that of the t...

Embodiment 2

[0062] Molybdenum disulfide film (with an area of ​​20mm 2 , the number of layers is 1 to 15 layers, and the thickness of each layer is 0.60 to 0.65nm) The growth substrate (sapphire substrate) is fixed on the glue homogenizer, and a drop of polydimethyl The phenetole ether solution of siloxane (the concentration of polydimethylsiloxane is 0.04g / mL), spin-coated at 1500rpm for 20s, repeated the spin-coating operation for a total of 3 times, and then at 150°C Carry out curing 5min, form polymer film (the thickness of described polymer film is 100nm) on the surface of described molybdenum disulfide film;

[0063] BOPP biaxially stretched polypropylene scotch tape (glue composition is butyl ester, glue layer thickness is 28 μ m) is pasted on the surface of polymer film, do not leave air bubble, with scissors the tape of redundant part around described polymer film is cut off, Ensure that the size of the polymer film is consistent with that of the tape; place the obtained sample ...

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Abstract

The invention provides a transfer method for large area monolayer and few-layer molybdenum disulfide film. The method uses the adhesive tape as a support for transferring the molybdenum disulfide film, polymer film is used asan insulating layer between molybdenum disulfide and transparent glue, the polymer film and molybdenum disulfide film are tightly adhered to the adhesive tape, which reduces the breakage of the film when the molybdenum disulfide film is separated from the growth substrate and facilitates the collection of the molybdenum disulfide film. At the same time, the transfer of molybdenum disulfide film and polymer film can be realized through the transfer glue during the transfer process, and the molybdenum disulfide film will not be damaged. As that precursor is immerse in acetone to separate the adhesive tape and the polymer film from the molybdenum disulfide film, the invention ensures that the adhesive tape doe not damage the molybdenum disulfide film in the detachmentprocess, and is favorable for realizing relatively complete transfer of a large-area single-layer molybdenum disulfide film or a small-layer molybdenum disulfide film.

Description

technical field [0001] The invention relates to the technical field of film transfer, in particular to a method for transferring large-area single-layer and few-layer molybdenum disulfide films. Background technique [0002] With the development of semiconductor technology, traditional silicon-based integrated circuits have encountered serious bottlenecks due to size problems. Two-dimensional materials such as graphene and molybdenum disulfide have attracted widespread attention due to their atomic thickness. Compared with graphene, single-layer molybdenum disulfide has a direct band gap with a width of 1.8eV, so single-layer molybdenum disulfide can be used in transistors and other memory devices. Studies have shown that the switching ratio of transistors with layered molybdenum disulfide as the channel can reach 1×10 7 ~1×10 8 , the carrier mobility can reach 200cm 2 ·V -1 ·S -1 . It can be seen that compared with graphene, molybdenum disulfide has more development p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02521
Inventor 王金斌张东国钟向丽岳少忠
Owner XIANGTAN UNIV
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