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Thin film transistor, display panel and manufacturing method of thin film transistor

A technology of thin film transistors and precursors, used in the production of display panels and thin film transistors, and the field of thin film transistors, can solve problems such as difficult top-gate structures, and achieve the effect of ensuring switching performance, stable performance and good performance

Active Publication Date: 2021-01-01
深圳庸行科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since metal oxides are extremely susceptible to the doping effect of impurities such as mobile metal ions, hydrogen ions, and oxygen vacancies, an etch barrier structure with channel protection is usually used, and it is difficult to use a top gate structure

Method used

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  • Thin film transistor, display panel and manufacturing method of thin film transistor
  • Thin film transistor, display panel and manufacturing method of thin film transistor
  • Thin film transistor, display panel and manufacturing method of thin film transistor

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Embodiment Construction

[0040] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.

[0041] This embodiment provides a thin film transistor, figure 1 is a schematic structural diagram of a thin film transistor provided by an embodiment of the present invention, refer to figure 1 , the thin film transistor includes:

[0042] glass substrate 10;

[0043] Active layer 20, source electrode 30 and drain electrode 40, active layer 20 is arranged on the surface of glass substrate 10; Source electrode 30 and drain electrode 40 are connected with active layer 20;

[0044] The first insulating layer 50 i...

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Abstract

The embodiment of the invention discloses a thin film transistor, a display panel and a manufacturing method of the thin film transistor. The thin film transistor comprises: an active layer arranged on the surface of a glass substrate, and a source electrode and a drain electrode connected to the active layer; a first insulating layer arranged on a side of the active layer away from the glass substrate; a gate layer arranged on the first The insulating layer is away from the side of the glass substrate; the second insulating layer covers the source, drain and gate layers, and the second insulating layer is provided with through holes, which expose the source and drain; the material used in the active layer is (MO)x(RO)y(TO)z, where 0

Description

technical field [0001] Embodiments of the present invention relate to semiconductor technology, and in particular, to thin film transistors, display panels, and manufacturing methods of thin film transistors. Background technique [0002] The core technology of the new flat panel display industry is thin film transistor (TFT, Thin Film Transistor) backplane technology. Metal oxide TFT (MO-TFT, Metal Oxide-TFT) not only has high mobility (at 1-100cm 2 / (V*s) or so), and the manufacturing process is relatively simple, compatible with the current a-Si process, the manufacturing cost is low, and it also has excellent large-area uniformity. Therefore, MO-TFT technology has attracted the attention of the industry since its birth. However, since metal oxides are extremely susceptible to the doping effect of impurities such as mobile metal ions, hydrogen ions, and oxygen vacancies, an etch barrier structure with channel protection is usually used, and it is difficult to use a top ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/24H01L29/786H01L21/34
CPCH01L29/24H01L29/66969H01L29/78603H01L29/7869
Inventor 徐苗李民彭俊彪王磊陶洪邹建华
Owner 深圳庸行科技有限公司
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