Method for directly growing even rhenium diselenide nanosheet on substrate electrode, modified electrode and application

A base electrode, rhenium diselenide technology, applied in chemical instruments and methods, rhenium compounds, inorganic chemistry, etc., can solve the problem that rhenium diselenide cannot grow on the electrode, and achieve improved catalytic performance, low temperature, and improved The effect of adhesion

Active Publication Date: 2018-11-23
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the defects and deficiencies in the prior art that rhenium diselenide cannot grow on electrodes, and provide a method for directly growing uniform rhenium diselenide nanosheets on substrate electrodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for directly growing even rhenium diselenide nanosheet on substrate electrode, modified electrode and application
  • Method for directly growing even rhenium diselenide nanosheet on substrate electrode, modified electrode and application
  • Method for directly growing even rhenium diselenide nanosheet on substrate electrode, modified electrode and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment provides a method for growing uniform rhenium diselenide nanosheets directly on carbon cloth electrodes, such as Figure 1~3 .

[0043] Step 101, cleaning of the substrate;

[0044] Step 102, processing of the substrate;

[0045] Step 103, drying of the substrate;

[0046] Step 104, growing uniform rhenium diselenide nanosheets on the carbon cloth by chemical vapor deposition;

[0047] In step 101: the carbon cloth is ultrasonicated for 5 minutes in the order of deionized water, acetone, ethanol, and deionized water, with ultrasonic power of 180 W and frequency of 40 KHz.

[0048] In step 102: soak the cleaned carbon cloth in the piranha solution at 120° C. for 2 hours to further clean the carbon cloth and increase the hydrophilicity of the carbon cloth. After natural cooling, rinse with deionized water.

[0049] In step 103: heat the treated carbon cloth on a heating platform at 80° C. for 10 minutes.

[0050] In step 104: use the chemical vapor d...

Embodiment 2

[0058] This embodiment provides a method for directly growing uniform rhenium diselenide nanosheets on carbon cloth electrodes. In the method provided in this embodiment, except that step 104 controls the growth temperature to 700° C., other steps and conditions are the same as those in Embodiment 1.

[0059] The rhenium diselenide nanosheets prepared in this embodiment, such as Figure 6 and Figure 7 .

Embodiment 3

[0061] This embodiment provides a method for directly growing uniform rhenium diselenide nanosheets on carbon cloth electrodes. In the method provided in this embodiment, it is the same as that in Embodiment 1 except that the growth temperature is controlled to be 600° C. in step 104 .

[0062] The rhenium diselenide nanosheets prepared in this embodiment, such as Figure 8 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for directly growing an even rhenium diselenide nanosheet on a substrate electrode, a modified electrode and application. The method comprises the following steps that 1, selenium powder is heated until the selenium powder gasifies, rhenium trioxide and the substrate electrode are heated, and reducing gas is introduced; 2, after the rhenium trioxide is heated until splitting, the gasified selenium powder and the rhenium trioxide are mixed, the temperature is elevated to 450-700 DEG C continuously, and rhenium diselenide grows and precipitates on the substrateelectrode, so that the even rhenium diselenide nanosheet is obtaned; a mass ratio of the selenium powder to the rhenium trioxide is (200 to 300) to 1. According to the method for directly growing theeven rhenium diselenide nanosheet on the substrate electrode, through a chemical vapor deposition method, the rhenium diselenide directly grows on the substrate electrode, the substrate electrode is used as an electrode for catalyzing hydrogen production, adhesion force between the rhenium diselenide and the electrode is greatly improved, and meanwhile, the catalytic performance of the rhenium diselenide is improved; moreover, the temperature in the method is low, and a technology is simple.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for directly growing uniform rhenium diselenide nanosheets on a base electrode, a modified electrode and its application. Background technique [0002] Hydrogen energy is recognized as a clean energy source, and it is emerging as a low-carbon and zero-carbon energy source. Countries around the world are studying how to produce hydrogen in large quantities and cheaply. Using solar energy to split water is a major research direction. The key to splitting water into hydrogen and oxygen under the action of light is to find a suitable catalyst. Due to the characteristics of mild reaction conditions, high energy utilization rate, and no secondary pollution caused by the photocatalytic decomposition of water to produce hydrogen by semiconductor materials, it has gradually become a research hotspot in the direction of artificial hydrogen production. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01G47/00C01B3/04
CPCC01B3/042C01G47/00C01P2002/82C01P2002/85C01P2004/03C01P2004/20Y02E60/36
Inventor 张璋李婧黄文添
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap