Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Medium-frequency plasma cleaning device

A plasma and cleaning device technology, applied in the directions of cleaning methods and utensils, chemical instruments and methods, etc., can solve the problems of thermal effect of material surface damage, damage to processing parts, etc., and achieves good fast contact, easy control, and is conducive to control purposes. effect of reaction

Inactive Publication Date: 2018-11-23
合肥杰硕真空科技有限公司
View PDF14 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the conventional plasma cleaning process, the workpiece to be cleaned is in the plasma ionization area. The cleaning process is accompanied by the physical cleaning process. High-energy active ions such as electrons and ions in the plasma will cause great damage and thermal effects on the surface of the material. , causing damage to the handle

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Medium-frequency plasma cleaning device
  • Medium-frequency plasma cleaning device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] In order to make it easier for those skilled in the art to understand the solution of the present invention, the technical solution of the present invention will be further specifically described in conjunction with specific embodiments.

[0012] like figure 1 , figure 2 As shown, the present invention is an intermediate frequency plasma cleaning device, comprising: an air intake device, a plasma generating device, a vacuum chamber, and an air extraction pipeline 6, and the air intake device includes an air inlet 10, an MFC mass flow meter 8, Electromagnetic valve 9, the plasma generating device includes positive and negative electrodes and PWM pulse width modulation power supply, the positive and negative electrodes include electrode terminal 7, electrode mounting plate 5, electrode tray 3, and the vacuum chamber includes a window flange 1 , the vacuum chamber door 2, the vacuum chamber body 4, and the electrode terminal 7 adopts a crocodile-mouth socket design. Thr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a medium-frequency plasma cleaning device. The device comprises an air inlet device, a plasma generating device, a vacuum chamber and a gas pumping pipeline, wherein the gas inlet device comprises an air inlet, an MFC mass flowmeter and an electromagnetic valve; the plasma generating device comprises a positive and negative electrode and a PWM pulse width modulation power source, wherein the positive and negative electrode comprise an electrode binding post, an electrode mounting plate and an electrode tray; the vacuum chamber comprises a window flange, a vacuum cavitydoor and a vacuum cavity; and the electrode binding post adopts a crocodile mouth type socket design. According to the medium-frequency plasma cleaning device, the excellent crocodile mouth type socket design is designed, so that rapid plugging can be achieved; and the contact is better than the contact with an electrified electrode, the clamping and pulling function is achieved, the high-energy active ion concentration of electrons, ions and the like are prone to be controlled, so that the more appropriate ions and active free radical ratio are obtained, the controlling of the target reactionis facilitated, the purposiveness and zero damage cleaning of a PCB plate and a FPC are realized.

Description

technical field [0001] The invention belongs to a device for cleaning PCB boards and FPCs, in particular to an intermediate frequency plasma cleaning device. Background technique [0002] Plasma cleaning has gradually been widely used in semiconductor manufacturing, microelectronic packaging, integrated circuits and other industries. The so-called plasma cleaning is to use plasma to treat the surface of the workpiece through chemical or physical action, so as to realize the removal of stains at the molecular level and improve the surface activity. However, in the conventional plasma cleaning process, the workpiece to be cleaned is in the plasma ionization area. The cleaning process is accompanied by the physical cleaning process. High-energy active ions such as electrons and ions in the plasma will cause great damage and thermal effects on the surface of the material. , causing damage to the handling parts. [0003] This plasma device is different from the traditional plas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B08B7/00B08B13/00
CPCB08B7/00B08B13/00
Inventor 詹铁锤程光周倪红德薛进
Owner 合肥杰硕真空科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products