Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof and belongs to the field of light-emitting diode manufacturing. An active layer is arranged to include afirst barrier layer and a plurality of InGaN well layers, wherein a plurality of first sub-barrier layers with a GaN / In<x>Ga<1-x>N / Al<z>Ga<1-z>N / In<y>Ga<1-y>N / GaN superlattice structure in the firstbarrier layer and the InGaN well layers are alternately stacked. The GaN / In<x>Ga<1-x>N / Al<z>Ga<1-z>N / In<y>Ga<1-y>N / GaN superlattice structure is relatively high in energy band and can play a role in preventing electrons from entering a P-type GaN layer, so that an electron blocking layer does not need to be arranged to prevent the electrons from flowing out of an active layer. Through the arrangement, the number of holes entering the active layer can be improved while the electrons are restricted from leaving the active layer, so that the number of the holes which are compounded with the electrons to emit light in the active layer is improved; and furthermore, the polarization condition, caused by the arrangement of the electron blocking layer, between the electron blocking layer and the active layer and the P-type layer in an epitaxial layer can also be reduced, so that reduction of a light-emitting band gap in the epitaxial layer is avoided and the recombination efficiency of the electrons and the holes is improved, thereby improving the light-emitting efficiency of a light-emitting diode.

Description

technical field [0001] The invention relates to the field of light-emitting diode manufacturing, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are semiconductor diodes that can convert electrical energy into light energy. They have the advantages of small size, long life, and low power consumption. They are currently widely used in automotive signal lights, traffic lights, display screens, and lighting equipment. The epitaxial wafer is the basic structure for making light-emitting diodes. The structure of the epitaxial wafer includes a substrate and an epitaxial layer grown on the substrate. Among them, the structure of the epitaxial layer mainly includes: a low-temperature GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an active layer, an AlGaN electron blocking layer and a P-type GaN layer grown on the substrate in sequence. [0003] The AlGaN electron blocking la...

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Problems solved by technology

But at the same time, the AlGaN electron blocking layer will also prevent holes from entering the active layer. The number of holes entering the active layer is originally less than the number of electrons entering the active layer. The AlGaN electron blocking layer will limit the entry into the active layer. The number of holes makes the number of holes that coincide with electrons in the active layer to emit light less, making the overall luminous efficiency of the light-emitting diode lower

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