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Gas supplementing device of tubular reactor

A tubular reactor and gas supply pipe technology, applied in electrical components, semiconductor devices, gaseous chemical plating, etc., can solve the problems of poor uniformity between sheets, unable to meet the requirements of improving the uniformity of coating thickness, etc., and achieve the optimal coating effect. Effect

Pending Publication Date: 2018-11-06
普乐新能源(蚌埠)有限公司
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Problems solved by technology

[0003] The existing furnace tube only has a plurality of main inlet pipes evenly distributed on the cover plate of the furnace mouth at the end of the furnace, and the main inlet pipes spray the process gas required for coating into the LPCVD tube furnace. The trachea can no longer meet the coating thickness uniformity requirements in the rear area of ​​LPCVD after the production capacity is increased, resulting in poor uniformity between sheets

Method used

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  • Gas supplementing device of tubular reactor
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Embodiment Construction

[0016] Such as figure 1 with 2 shown

[0017] The air supply device comprises four air supply pipes, a main pipe 3 and four flow control valves 2 .

[0018] The four air supply pipes are the first air supply pipe 11, the second air supply pipe 12, the third air supply pipe 13 and the fourth air supply pipe 14. The four air supply pipes have the same structure. Taking the first air supply pipe 11 as an example, the front end of the air supply pipe runs through The furnace tail cover plate 43 extends into the LPCVD tube furnace 4, and the rear end of the gas supply pipe stretches out from the rear side of the LPCVD tube furnace 4.

[0019] The distances between the four gas supply pipes extending into the LPCVD tube furnace 4 are all different. The front end of the first gas supply pipe 11 is the first air outlet hole 11a, and the length of the first air outlet hole 11a from the furnace tail cover plate 43 is equal to the axial length of the inner hole of the LPCVD tube furnac...

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Abstract

The invention provides a gas supplementing device of a tubular reactor. The gas supplementing device comprises at least one air supplementing pipe, the process gas needed by film coating is introducedinto the rear end of the air supplementing pipe, the front end of the gas supplementing pipe penetrates through a furnace tail cover plate and extends into an LPCVD pipe furnace, and a gas outlet hole for allowing the process gas to be discharged is formed in the front end surface of the gas supplementing pipe. The process gas is conveyed into the LPCVD pipe furnace through the gas supplementingpipe, wherein the amount of the process gas sprayed by a main gas inlet pipe is supplemented, the thickness uniformity of the interlayer film layer of an LPCVD coated film in a certain area is improved, then the length of a furnace pipe can be increased by using the gas supplementing device of the tubular reactor so as to increase the length of a constant-temperature area, and then the purpose ofincreasing the productivity can be achieved.

Description

technical field [0001] The invention relates to a film coating technology in the manufacture of solar cells, in particular to a gas supply device for improving the uniformity between sheets of a hot-wall LPCVD tube furnace. Background technique [0002] In the production process of solar cells, it is necessary to coat the surface, such as polysilicon, silicon nitride, etc., and it is necessary to use the LPCVD process for coating. In order to increase the production capacity, the loading capacity of the single-tube LPCVD tube furnace (tubular reactor) was increased from several hundred to 1200 pieces, resulting in a significant increase in the length of the furnace tube, the length of the process constant temperature zone and the distribution of process gas, especially the process constant temperature The technical requirements for inter-chip uniformity in the middle and back areas of the area are greatly improved. [0003] The existing furnace tube only has a plurality of ...

Claims

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Application Information

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IPC IPC(8): C23C16/455H01L31/18
CPCH01L31/18C23C16/455Y02P70/50
Inventor 王杨阳孙友巍练菊孙嵩泉
Owner 普乐新能源(蚌埠)有限公司
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