A kind of gas discharge reactor, gas discharge system and preparation method of trichlorosilane

Abstract

The invention provides a gas discharge reactor, a gas discharge system, and a preparation method of trichlorosilane, and belongs to the technical field of polycrystalline silicon production. The gas discharge reactor includes an inner electrode, an outer electrode, a first dielectric medium and a second dielectric medium, wherein the outer electrode is arranged outside the inner electrode; the second dielectric medium is disposed in the outer electrode; the first dielectric medium is located between the inner electrode and the outer electrode; a rare gas discharge chamber is formed between theinner electrode and the first dielectric medium; a material gas discharge chamber is formed between the first dielectric medium and the outer electrode; the gas discharge reactor has a material gas inlet and a material gas outlet, which are both disposed on the outer electrode and communicated with the material gas discharge chamber. The gas discharge reactor with the gas discharge system is employed in the preparation method of trichlorosilane, in which the material gas is separated from the rare gas, so that the rare gas can be recycled and pollution on the trichlorosilane can be avoided.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a gas discharge reactor, a gas discharge system and a method for preparing trichlorosilane. Background technique [0002] At present, the modified Siemens method is the mainstream technology for producing polysilicon, and more than 95% of the polysilicon in the market is produced by the modified Siemens method. According to statistics, when the improved Siemens method is used to produce polysilicon, about 16 tons of silicon tetrachloride will be produced for every ton of polysilicon produced. The hydrogenation of silicon tetrachloride to prepare trichlorosilane is the key to ensure the improved closed-circuit cycle of the Siemens process, and the realization of low-pollution hydrogenation of silicon tetrachloride to prepare high-purity trichlorosilane is an inevitable requirement for the production of high-purity polysilicon. [0003] At present, polysilicon facto...

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Problems solved by technology

[0005] Existing gas discharge reactors use a single-layer dielectric, and the exposed electrodes will sputter metal particles during the discharge process, which will pollute the discharge gas, affect product quality, and make product separation difficult

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