Phase shift mask blank and method for manufacturing phase shift mask using the same and pattern transfer method

A phase shift mask and manufacturing method technology, applied in the photoengraving process of the pattern surface, the original for photomechanical processing, optics, etc., can solve the problems of pattern position change, increase of thermal deformation of mask substrate, etc. , to achieve the effect of small CD deviation, good precision and good cross-sectional shape

Pending Publication Date: 2018-10-16
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the size of the mask substrate increases, the thermal deformation of the mask substrate due to the absorption of exposure light increases, and the position of the pattern formed on the photomask may change.

Method used

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  • Phase shift mask blank and method for manufacturing phase shift mask using the same and pattern transfer method
  • Phase shift mask blank and method for manufacturing phase shift mask using the same and pattern transfer method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0084] Embodiment 1 will describe a phase shift mask blank.

[0085] figure 1 It is a schematic diagram showing the film configuration of the phase shift mask blank 10 .

[0086] figure 1 The illustrated phase shift mask blank 10 has a transparent substrate 20 , a phase shift film 30 formed on the transparent substrate 20 , and a light shielding film 40 formed on the phase shift film 30 .

[0087] The transparent substrate 20 is transparent to exposure light. The transparent substrate 20 has a transmittance to exposure light of 85% or higher, preferably 90% or higher, when there is no surface reflection loss. The transparent substrate 20 is made of a material containing silicon and oxygen, and can be made of synthetic quartz glass, quartz glass, aluminosilicate glass, soda lime glass, low thermal expansion glass (SiO 2 -TiO 2 Glass, etc.) and other glass materials. When the transparent substrate 20 is made of low thermal expansion glass, it is possible to suppress the po...

Embodiment approach 2

[0146] In Embodiment 2, the manufacturing method of a phase shift mask is demonstrated.

[0147] figure 2 is a schematic diagram illustrating a method of manufacturing a phase shift mask.

[0148] figure 2 The phase shift mask shown is fabricated using a figure 1 The manufacturing method of the phase shift mask blank of the phase shift mask blank 10 shown, this method comprises the following first resist pattern forming process, first light shielding film pattern forming process, phase shift film pattern forming process, second A resist pattern forming process, and a second light-shielding film pattern forming process.

[0149] Hereinafter, each step will be described in detail.

[0150] 1. First resist pattern formation process

[0151] In the first resist pattern forming step, first, a resist film is formed on the light shielding film 40 of the phase shift mask blank 10 according to the first embodiment. The material of the resist film to be used is not particularly ...

Embodiment approach 3

[0172] In Embodiment 3, a method of manufacturing a display device will be described. The display device was manufactured by performing the following mask placement step and pattern transfer step. The pattern transfer step corresponds to a pattern transfer method.

[0173] Hereinafter, each step will be described in detail.

[0174] 1. Loading process

[0175] In the mounting step, the phase shift mask manufactured in Embodiment 2 is mounted on the mask stage of the exposure apparatus. Here, the phase shift mask is arranged to face the resist film formed on the display device substrate via the projection optical system of the exposure device. For example, as the exposure apparatus, a projection exposure apparatus having an equal magnification projection optical system is used.

[0176] 2. Pattern transfer process

[0177] In the pattern transfer step, the phase shift mask is irradiated with exposure light to transfer the phase shift film pattern onto the resist film forme...

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Abstract

The present invention provides a phase shift mask blank capable of producing a phase shift mask which is capable of accurately transferring a high-definition phase shift film pattern. The phase shiftfilm of the present invention has at least a lower layer and an upper layer, the lower layer has a function of adjusting a reflectance for light incident from a side of the transparent substrate, theupper layer is disposed on an upper side of the lower layer and has a function of adjusting the transmittance and the phase difference of the exposure light, the phase shift film has a given optical characteristic for the transmittance and phase difference of the exposure light, and the phase shift film has a reflectance of more than 20% for light of a wavelength range of 365 nm to 436 nm incidentfrom the side of the transparent substrate, and the fluctuation range of the reflectance of light in the wavelength range of 365 nm to 436 nm incident from the transparent substrate side is 10% or less.

Description

technical field [0001] The present invention relates to a phase shift mask blank, a method for manufacturing a phase shift mask using the same, and a pattern transfer method. Background technique [0002] In recent years, along with the high resolution and high definition of display devices such as FPD (Flat Panel Display), there is a demand for a phase shift mask for display device manufacturing in which a fine pattern is formed. [0003] Conventional common phase shift mask blanks for manufacturing phase shift masks for display device manufacturing are formed on a mask substrate made of synthetic quartz glass (hereinafter sometimes referred to as a synthetic quartz glass substrate). A phase shift film, and then a light-shielding film is formed on the phase shift film. When the phase shift film is made of MoSiN, the transmittance to i-line used as exposure light is about 5%, and the reflectance to light incident from the mask substrate side is 11%. [0004] Patent Documen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/26G03F1/80
CPCG03F1/26G03F1/80G03F7/70958G03F7/70233
Inventor 坪井诚治
Owner HOYA CORP
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