Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

N-doped graphene and preparation method thereof

A nitrogen-doped graphene and graphite technology, applied in the field of nanomaterials, can solve the problems of low purity of graphene materials, complex preparation process, poor performance, etc., and achieve the effects of improving efficiency, increasing defectivity, and increasing specific capacity.

Active Publication Date: 2018-10-16
GUANGDONG POWER GRID CO LTD +1
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a nitrogen-doped graphene and a preparation method thereof, which solves the problems of high cost, complex preparation process, low purity and poor performance of the prepared graphene material in the existing method for preparing graphene question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N-doped graphene and preparation method thereof
  • N-doped graphene and preparation method thereof
  • N-doped graphene and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Step 1: If figure 1 As shown, the graphite carbon paper with a thickness of 1mm is used as the positive electrode A, the platinum wire is used as the negative electrode B, and the mixed acid is used as the electrolyte solution C. A voltage of 2V is applied between the two electrodes, and the electrochemical intercalation is performed for 30 minutes. The product is washed to neutrality and dried to obtain expanded graphite.

[0033] Step 2: Place the expanded graphitic carbon obtained in step: 1 under an ammonia atmosphere, heat to a high temperature of 700° C., and perform an annealing reaction for 1 hour to obtain nitrogen-doped graphene.

[0034] The prepared nitrogen-doped graphene was tested for capacitance performance, from Figure 5 The test results show that the material at 100mVs -1 Next, the specific capacitance is 55.73F / g.

Embodiment 2~6

[0035] Embodiment 2~6 and comparative example 1~6

[0036] Based on the scheme of Example 1, Examples 2-6 and Comparative Examples 1-6 were obtained by adjusting and controlling different reaction conditions, and the specific reaction parameters and performance thereof are shown in Table 1:

[0037] Table 1 Reaction parameters and properties of Examples 2-6 and Comparative Examples 1-6

[0038]

[0039] From the results of Example 1 and Table 1, the performance of the nitrogen-doped graphene material prepared in Example 1 is the best, and has good capacitance characteristics. By calculation, this graphene material has a scan rate of 100mVs -1 Next, the capacitance value is 55.73F / g. figure 2 For the SEM figure of the nitrogen-doped graphene prepared in embodiment 1, by figure 2 It can be seen that the material has a thin-layer structure, which is conducive to the increase of the specific surface area, thereby further improving the specific capacitance. image 3 For th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of nanomaterials, in particular to N-doped graphene and a preparation method thereof. The preparation method of N-doped graphene comprises following steps: step 1, graphite is subjected to electrochemical intercalation, and expanded graphite is obtained; step 2, expanded graphite and an N source are mixed and heated to 100-800 DEG C, a mixture is annealed, and N-doped graphene is obtained. The invention further provides N-doped graphene prepared with the method. According to N-doped graphene and the preparation method thereof, the technical problems of lowerpurity and poorer performance of a graphene material prepared with an existing graphene preparation method which is higher in cost and complicated in preparation process are solved.

Description

technical field [0001] The invention relates to the field of nanomaterials, in particular to a nitrogen-doped graphene and a preparation method thereof. Background technique [0002] Graphene is a single-atom graphite material whose lattice is a two-dimensional honeycomb structure composed of carbon atoms. In 2004, for the first time, graphene sheets with relatively few layers were obtained by mechanical exfoliation, and they were found to have a unique chemical structure and excellent performance. Graphene is called "black gold" by people immediately, and is considered to be a very promising new material in the 21st century. In recent decades, scientists from all over the world have done a lot of research on graphene, enabling graphene to be used in semiconductors, solar cells, batteries and sensors. [0003] However, graphene still has the following problems: first, the preparation process of graphene is complicated, the cost is high, and it is difficult to produce on a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/19C01B32/194
CPCC01B2204/22C01B32/19C01B32/192
Inventor 王超肖祥钟国彬徐凯琪伍世嘉赵伟卢锡洪冯浩槟
Owner GUANGDONG POWER GRID CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products