N-doped graphene and preparation method thereof
A nitrogen-doped graphene and graphite technology, applied in the field of nanomaterials, can solve the problems of low purity of graphene materials, complex preparation process, poor performance, etc., and achieve the effects of improving efficiency, increasing defectivity, and increasing specific capacity.
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Embodiment 1
[0032] Step 1: If figure 1 As shown, the graphite carbon paper with a thickness of 1mm is used as the positive electrode A, the platinum wire is used as the negative electrode B, and the mixed acid is used as the electrolyte solution C. A voltage of 2V is applied between the two electrodes, and the electrochemical intercalation is performed for 30 minutes. The product is washed to neutrality and dried to obtain expanded graphite.
[0033] Step 2: Place the expanded graphitic carbon obtained in step: 1 under an ammonia atmosphere, heat to a high temperature of 700° C., and perform an annealing reaction for 1 hour to obtain nitrogen-doped graphene.
[0034] The prepared nitrogen-doped graphene was tested for capacitance performance, from Figure 5 The test results show that the material at 100mVs -1 Next, the specific capacitance is 55.73F / g.
Embodiment 2~6
[0035] Embodiment 2~6 and comparative example 1~6
[0036] Based on the scheme of Example 1, Examples 2-6 and Comparative Examples 1-6 were obtained by adjusting and controlling different reaction conditions, and the specific reaction parameters and performance thereof are shown in Table 1:
[0037] Table 1 Reaction parameters and properties of Examples 2-6 and Comparative Examples 1-6
[0038]
[0039] From the results of Example 1 and Table 1, the performance of the nitrogen-doped graphene material prepared in Example 1 is the best, and has good capacitance characteristics. By calculation, this graphene material has a scan rate of 100mVs -1 Next, the capacitance value is 55.73F / g. figure 2 For the SEM figure of the nitrogen-doped graphene prepared in embodiment 1, by figure 2 It can be seen that the material has a thin-layer structure, which is conducive to the increase of the specific surface area, thereby further improving the specific capacitance. image 3 For th...
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