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A silicon-based oled pixel circuit and its method for compensating for changes in oled electrical characteristics

A pixel circuit, silicon-based technology, applied in the field of micro-display, can solve problems such as the influence of OLED driving current, and achieve the effect of improving display quality and improving brightness drop

Active Publication Date: 2020-08-14
SOUTHEAST UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to provide a silicon-based OLED pixel circuit and a method for compensating for changes in OLED electrical characteristics, so as to solve the influence of OLED electrical characteristic changes caused by aging of OLED devices in existing silicon-based OLED pixel circuits on OLED drive current.

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  • A silicon-based oled pixel circuit and its method for compensating for changes in oled electrical characteristics
  • A silicon-based oled pixel circuit and its method for compensating for changes in oled electrical characteristics
  • A silicon-based oled pixel circuit and its method for compensating for changes in oled electrical characteristics

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[0028] In order to further illustrate the technical means and effects adopted by the present invention, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0029] Such as figure 2As shown, the present invention provides a silicon-based OLED pixel circuit, the silicon-based OLED pixel circuit includes a first metal-oxide-semiconductor field effect transistor M1, a second metal-oxide-semiconductor field effect transistor M2, a third metal - an oxide-semiconductor field effect transistor M3, a fourth metal-oxide-semiconductor field effect transistor M4, a storage capacitor CS and an orga...

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Abstract

The invention discloses a silicon-based OLED pixel circuit and a method for compensating the change of the electrical properties of an OLED. The silicon-based OLED pixel circuit is composed of four metal-oxide-semiconductor field-effect tubes, one storage capacitor and one organic light-emitting diode. For the silicon-based OLED pixel circuit and the method for compensating the change of the electrical properties of the OLED, the organic light-emitting diode is placed at the drain electrode of a driving tube, the driving tube is enabled to work at the saturation region, so that the working current of the driving tube is irrelevant to the voltage of the drain electrode of the driving tube, therefore, the influences of the change of the electrical properties caused by ageing of the organic light-emitting diode on the working current of the organic light-emitting diode are eliminated, the problem that the luminance of a silicon-based OLED microdisplay decreases is improved, and the display quality of the microdisplay is improved.

Description

technical field [0001] The invention relates to the field of micro-display technology, in particular to a silicon-based OLED pixel circuit and a method for compensating for changes in the electrical characteristics of the OLED. Background technique [0002] Silicon-based OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) microdisplay is a microdisplay technology that makes an active light emitting device OLED on a single crystal silicon wafer. It has the advantages of small size, self-illumination, low power consumption, and wide viewing angle. It is mainly used in near-eye displays and portable wearable devices, involving entertainment, military, scientific research and other fields. [0003] The traditional silicon-based OLED pixel circuit is a 2T1C (2-Transistor-1-Capacitor) pixel drive circuit. see figure 1 , the 2T1C pixel drive circuit consists of 2 MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field Effect Trans...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/3208G09G3/3233G09G3/3266
CPCG09G3/3208G09G3/3233G09G3/3266
Inventor 李晨赖良德张彤张晓阳
Owner SOUTHEAST UNIV
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