A copper metal interconnect electromigration test structure and test method thereof

Abstract

The invention discloses a copper metal interconnection electromigration test structure, which comprises a metal wire arranged horizontally, including; a plurality of upper metal layers arranged horizontally on the upper layer of the metal wire; a plurality of lower metal layers arranged horizontally on the upper layer of the metal wire. The lower layer of the metal wire; a plurality of upper metal layer connection through holes, respectively connected to the upper layer metal layer and the metal wire; a plurality of lower layer metal layer connection through holes, respectively connected to the lower layer metal layer and the metal wire; a plurality of connection A line, one end of which is connected to the upper metal layer or the lower metal layer; a plurality of metal plates. Also disclosed is a test method for the electromigration test structure of the copper metal interconnection. According to the test results of the copper metal interconnection electromigration test structure of the present invention, a test structure that is more in line with the process is designed, and the influence of the process of opening the upper end of the metal line on the back-end metal interconnection structure is well monitored, thereby improving the barrier layer or The post-stage copper metal interconnection process reduces the risk of mass production of products.

Description

technical field [0001] The invention relates to a semiconductor copper metal layer test structure, in particular to a copper metal interconnect electromigration test structure and a test method thereof. Background technique [0002] With the development of technology nodes, electromigration has become an important reliability focus of metal interconnections in integrated circuits. In a typical electromigration evaluation, there are two structures, including such as figure 1 The test electronics downstream (downstream) with such as figure 2 The test electronic upstream situation (upstream) to assess the electromigration metal line or via (via) failure mode and life prediction. From the perspective of electromigration failure, generally, trench voids and via voids on the metal line under test will appear in the test structure of the upstream test electronics; ) test structures generally appear void beneath via and trench voids on the metal line under test, and all voids are...

AI Technical Summary

Problems solved by technology

Therefore, the commonly used EMupstream structure has certain limitations

Images