Semiconductor structure formation method

Abstract

The invention provides a semiconductor structure formation method comprising the steps that a substrate is provided; a gate oxide layer is formed on the surface of the substrate; a doping element is injected into the gate oxide layer, and the doping element is suitable for enhancing the dielectric coefficient of the gate oxide layer; and after injection of the doping element, the gate oxide layeris processed by using the laser surface treatment technology. The dangling bonds in the gate oxide layer can be repaired so that the stability of the doping element can be enhanced; besides, the amorphous layer can be formed on the surface of the gate oxide layer to effectively reduce volatilization of the doping element close to the surface in the gate oxide layer, and diffusion of the doping element in the gate oxide layer to the interface between the gate oxide layer and the substrate can also be significantly reduced so that the performance of the semiconductor structure can be enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] The gate oxide layer is used as the dielectric between the gate and the channel. As the size of the semiconductor structure continues to shrink, the thickness of the gate oxide layer becomes thinner and thinner. Bring a series of technical challenges. For example, an overly thin gate oxide layer will increase the leakage current of the semiconductor structure, resulting in high power consumption of the semiconductor structure; in addition, an overly thin gate oxide layer will also make it easy for impurities to diffuse from the gate into the substrate. [0003] In order to reduce the leakage current and impurity diffusion probability, the most direct method is to increase the thickness of the gate oxide layer, and at the same time, in order to keep the capacitance of the gate oxide ...

AI Technical Summary

Problems solved by technology

[0004] However, despite the improved dielectric constant of the gate oxide layer, the performance of the semiconductor structures in the prior art still needs to be improved

Images