Self-adaptive stochastic resonance denoising method for silicon single crystal growth image under low signal-to-noise ratio

Abstract

The invention discloses a self-adaptive stochastic resonance denoising method for a silicon single crystal growth image under a low signal-to-noise ratio. For the silicon single crystal growth image under the low signal-to-noise ratio, the bistable stochastic resonance is combined with the PSO optimization algorithm, and the self-adaptive stochastic resonance image denoising algorithm based on PSOis designed. According to the method disclosed by the invention, the stochastic resonance is used for detecting weak signals in a lossless mode, so thunder the silicon single crystal growth image under the low signal-to-noise ratio is denoised and enhanced. The quality of the image is improved and the PSO optimization algorithm is utilized. The Donoho noise standard deviation is used as the fitness function of the optimization algorithm. The system parameters of the stochastic resonance are adjusted in real time so as to obtain the optimal resonance output effect, and the image denoising effect is realized. After the silicon single crystal growth image is processed by the method, the noise can be effectively removed. The quality of the image can be improved. Therefore, the meniscus of thesilicon single crystal image under the low signal-to-noise ratio can be accurately detected. The foundation is laid for the accurate detection of the diameter of crystals.

Description

Technical field [0001] The invention belongs to the technical field of silicon single crystal growth image detection under low signal-to-noise ratio, and relates to a denoising method for silicon single crystal growth images based on PSO algorithm with adaptive stochastic resonance. Background technique [0002] Silicon single crystals are widely used in the manufacture of photovoltaic cells and integrated circuits. The preparation method of silicon single crystal is usually to melt polysilicon at high temperature, and then grow rod-shaped silicon single crystal from the melt by Czochralski method or zone melting method. [0003] In the Czochralski crystal growth process, the crystal diameter is an important macroscopic parameter that needs to be detected and controlled. During the crystal growth process, the crystal diameter needs to be transitioned from the seed crystal to the target diameter in the seeding-shouldering stage; the crystal diameter needs to be measured in the equa...

AI Technical Summary

Problems solved by technology

However, in the crystal imaging process, it will inevitably be disturbed by the noise in the environment, which will cause the crystal image to be polluted, thereby affecting the detection of the meniscus of the crystal image, and also affecting the measurement of the crystal diameter.

When the amount of noise contained in the crystal image is large, the meniscus cannot be detected, that is, the diameter of the crystal cannot be detected

Images