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Full-addition circuit composed of CMOS inverters and memristors

A technology of inverters and memristors, applied in the field of logic circuits, can solve problems such as numerous operation steps, reduction of logic circuit operation steps, time extension, etc., and achieve the effect of reducing logic operation steps, improving integration, and streamlining components

Active Publication Date: 2018-08-24
SOUTHWEST UNIVERSITY
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the above problems, the present invention provides a full-add circuit based on CMOS inverters and memristors, which combines the non-volatility and logic binary properties of memristors, and realizes the integration of calculation and storage of logic circuits. , which greatly reduces the operation steps and time delay of the logic circuit, and solves the problems of many operation steps and time extension of the existing logic circuit

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  • Full-addition circuit composed of CMOS inverters and memristors
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  • Full-addition circuit composed of CMOS inverters and memristors

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Embodiment Construction

[0022] In order to make the technical problems, technical solutions and advantages to be solved by the present invention more clear, the following will be described in detail in conjunction with the accompanying drawings and specific embodiments. The description here does not mean that all the subjects corresponding to the specific examples stated in the embodiments are in cited in the claims.

[0023] Such as figure 1 As shown, a full-add circuit based on CMOS inverters and memristors, including four CMOS inverters, wherein: the first inverter and four memristors constitute an exclusive OR gate circuit, the fourth The inverter and the other four memristors constitute a NOR gate circuit, and the second inverter and the third inverter respectively receive the initial carry signal V Cin , the upper end of the second inverter is connected to the input end of the first inverter, the lower end of the second inverter is connected to the input end of the fourth inverter, and the car...

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Abstract

The invention discloses a full-addition circuit composed of CMOS inverters and memristors. The full-addition circuit comprises four CMOS inverters, wherein the first inverter and four memristors forman XOR gate circuit, the fourth inverter and another four memristors form an XNOR gate circuit, the second inverter and the third inverter separately receive initial carry signals VCin, the upper endof the second inverter is connected to the input end of the first inverter, the lower end of the second inverter is connected to the input end of the fourth inverter, the second inverter outputs a carry signal VCout, the output end of the XOR gate circuit is connected to the upper end of the third inverter, the output end of the XNOR gate circuit is connected to the lower end of the third inverter, and the third inverter outputs a sum voltage VSum. The scheme of the invention has the effects that: according to the circuit, a logical circuit integrates computing and storage functions, logical operation steps can be greatly reduced, components required by the circuit can be simplified, the circuit costs can be further reduced, and the integration degree of the circuit can be improved.

Description

technical field [0001] The invention relates to a logic circuit composed of a memristor, in particular, a full-add circuit based on a CMOS inverter and a memristor. Background technique [0002] In 1971, some scholars proposed a fourth basic circuit element besides capacitors, inductors, and resistors based on the circuit completeness theory, calling it a memristor, and described its physical characteristics. However, the physical object of memristor has not been developed, so it has not attracted much attention from researchers. In 2008, researchers in HP Labs announced that they had developed the world's first memristor physical device, which immediately attracted widespread attention from researchers and the industry. Because of its memory characteristics and the ability to store calculation results in itself, a large number of scholars have begun to study the potential of this basic circuit element with memory characteristics in modern circuit system design, especially ...

Claims

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Application Information

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IPC IPC(8): H03K19/017
CPCH03K19/017
Inventor 胡小方杨辉段书凯王丽丹
Owner SOUTHWEST UNIVERSITY
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