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Device and method for measuring secondary electron emission coefficient of metal materials in low energy range

A technology of secondary electron emission and metal materials, which is applied in the direction of measurement devices, material analysis by measuring secondary emissions, and analysis of materials. It can solve the problems of lack of testing capabilities and expensive testing systems, and achieve improved measurement efficiency and device Build flexibility and cost-reduced effects

Active Publication Date: 2021-02-05
XIAN INSTITUE OF SPACE RADIO TECH
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Problems solved by technology

[0003] At present, most of the secondary electron emission characteristic measurement platforms at home and abroad can only measure the secondary electron emission coefficient in the high energy range, and lack the test capability under low energy conditions. Due to the inherent complexity of controlling and measuring electrons in the low energy range, There are few researches on the low-energy secondary electron emission coefficient in the world, so it is of great significance for the accurate measurement of the low-energy secondary electron emission coefficient of metal materials
[0004] The existing method of measuring the emission characteristics of low-energy secondary electrons by using the current method relies heavily on the precise control of the electron landing energy by the electron gun. The test system is expensive and requires two measurements to achieve

Method used

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  • Device and method for measuring secondary electron emission coefficient of metal materials in low energy range
  • Device and method for measuring secondary electron emission coefficient of metal materials in low energy range

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Embodiment

[0037] Implementation with gold-plated swatches:

[0038] (1), install the sample, and ensure that the secondary electron emission coefficient is measured at a vacuum degree of P = 10 -8 Conducted in an environment below Torr, the range of low energy measured for a given secondary electron emission coefficient is 0-50eV;

[0039] (2) Adjust the collector to ensure that the electron gun can hit the sample through the reserved hole on the top of the collector. The collector surrounds the sample in the vertical direction. The ammeter A is connected to the sample, and the ammeter B receives the inner surface of the collector. Two The ammeters are all grounded, the outer surface of the collector is grounded, and the inner surface of the collector is positively biased by V c =50V, the connection relationship is as follows figure 1 shown;

[0040] (3), i=0, set the cathode voltage V of the electron gun g =200V, add negative bias voltage V to the sample bias (0)=-V g , read the ...

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Abstract

The invention relates to an apparatus and a method for measuring the secondary electron yield of a metal material within a low energy range. The apparatus comprises a collection pole, two ammeters andan electron gun, wherein the collection pole has two layer and has a downward opening, the top portion of the structure of the collection pole is provided with a reservation hole, the upper surface of a sample is placed in the collection pole and is positioned just below the reservation hole, the electron gun shoots incident electrons onto the sample through the reservation hole, one ammeter as the ammeter A is connected between the sample and the ground, the other ammeter as the ammeter B is connected between the inner surface of the collection pole and the ground, and the outer surface of the collection pole is grounded.

Description

technical field [0001] The invention relates to a method for measuring the secondary electron emission coefficient of a metal material in a low energy range, belonging to the field of microdischarge of microwave components. Background technique [0002] The micro-discharge effect is an important factor affecting the performance and reliability of high-power microwave components of spacecraft, and the secondary electron emission coefficient has a significant impact on the micro-discharge threshold; in order to establish a secondary electron emission model on the surface of microwave components, it is necessary to accurately measure the secondary electron Emission coefficient: International studies have shown that the secondary electron emission coefficient in the low energy range has a significant impact on the micro-discharge threshold. [0003] At present, most of the secondary electron emission characteristic measurement platforms at home and abroad can only measure the se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/2208
CPCG01N23/22
Inventor 王新波苗光辉张恒崔万照谢桂柏杨晶李韵王瑞张娜孙勤奋
Owner XIAN INSTITUE OF SPACE RADIO TECH
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