A test structure and test method for reliability test with independent temperature control

Abstract

The invention discloses an independent temperature control testing structure for reliability tests and a testing method thereof; the testing structure comprises the following parts: two polysilicon sheets arranged in parallel; a to-be-tested structure arranged in the middle point of the spacing between the two polysilicon sheets; two diode temperature sensors symmetrically arranged on two sides ofthe to-be-tested structure and located in the middle point of the spacing between the two polysilicon sheets. The independent temperature control testing structure for reliability tests and the testing method thereof can realize independent control of the to-be-tested structure temperature, and can effectively reduce the testing time of the whole test, thus reducing a test-retest rate, improvingthe testing efficiency, enlarging suitable places of a high temperature wafer level test, modulating Joule heat formed by current passing the polysilicon, and increasing the polysilicon temperature linearity.

Description

technical field [0001] The invention relates to a semiconductor testing structure and method, in particular to an independent temperature-controlled testing structure for reliability testing and a testing method thereof. Background technique [0002] The reliability test generally tests the worst state of the device, so most of the tests are high-temperature tests. At present, most of the high-temperature tests at the wafer level are heated by the wafer carrier, which has the following disadvantages: The temperature rise and fall of the platform and the preheating before the test will waste a lot of time, resulting in a long test time for each item; during the high temperature test, it is easy to cause the probe card to slip out of the device wiring pad, resulting in a high retest rate; High temperature has higher requirements on the leakage current of the probe card, which needs to be specially made, and the cost is higher. In addition, when high-temperature testing is per...

AI Technical Summary

Problems solved by technology

[0002] The reliability test generally tests the worst state of the device, so most of the tests are high-temperature tests. At present, most of the high-temperature tests at the wafer level are heated by the wafer carrier, which has the following disadvantages: The temperature rise and fall of the platform and the preheating before the test will waste a lot of time, resulting in a long test time for each item; during the high temperature test, it is easy to cause the probe card to slip out of the device wiring pad, resulting in a high retest rate; At high temperature, the leakage requirements of the probe card are relatively high, so it needs to be specially made, and the cost is high

In addition, when high-temperature testing is performed on product wafers or when high-temperature probe stations are not allowed in certain areas of the factory, reliability monitoring in the factory cannot be carried out

Images